| Published Papers |
| No. | Title, Author, Journal, Vol( No), Start Page- End Page, Date of publication, DOI, URL
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| 1 | Epitaxial growth of heavily doped n+-Ge layers using metal-organic chemical vapor deposition with in situ phosphorus doping, S. Ike, W. Takeuchi, O. Nakatsuka, and S. Zaima, Thin Solid Films, 645, 57- , Jan. 1, 2018, ,
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| 2 | In situ phosphorus-doped Ge1-xSnx layers grown using low-temperature metal-organic chemical vapor deposition, S. Ike, W. Takeuchi, O. Nakatsuka, and S. Zaima, Semicond. Sci. Tech., 32, 124001- , Oct. 26, 2017, ,
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| 3 | Formation of SiC thin films by chemical vapor deposition with vinylsilane precursor, T. Doi, W. Takeuchi, Y. Jin, H. Kokubun, S. Yasuhara, O. Nakatsuka, and S. Zaima, Jpn. J. Appl. Phys., 57( 1S), 01AE08- , 2017, ,
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| 4 | Selective growth of Ge1-xSnx epitaxial layer on patterned SiO2/Si substrate by metal-organic chemical vapor deposition, W. Takeuchi, T. Washizu, S. Ike, O. Nakatsuka, and S. Zaima, Jpn. J. Appl. Phys., 57( 1S), 01AC05- , 2017, ,
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| 5 | Effect of N bonding structure in AlON deposited by plasma-assisted atomic layer deposition on electrical properties of 4H-SiC MOS capacitor, W. Takeuchi, K. Yamamoto, M. Sakashita, O. Nakatsuka, and S. Zaima, Jpn. J. Appl. Phys., 57( 1S), 01AE06- , 2017, ,
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| 6 | Low-temperature crystallization of Ge-rich GeSn layers on Si3N4 substrate, I. Yoshikawa, M. Kurosawa, W. Takeuchi, M. Sakashita, O. Nakatsuka, S. Zaima, Materials Science in Semiconductor Processing, ( 70), 151-155- , Dec. 2016, ,
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| 7 | Solid-phase crystallization of Si1-x-ySnxCy ternary alloy layers and characterization of their crystalline and optical properties, S. Yano, T. Yamaha, Y. Shimura, W. Takeuchi, M. Sakashita, M. Kurosawa, O. Nakatsuka and S. Zaima, Jpn. J. Appl. Phys., 56, 01AB02- , Nov. 30, 2016, ,
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| 8 | EXAFS study of local structure contributing to Sn stability in SiyGe1-y-zSnz, Y. Shimura, T. Asano, T. Yamaha, M. Fukuda, W. Takeuchi, O. Nakatsuka, S. Zaima, Materials Science in Semiconductor Processing, ( 468), 133-138- , Nov. 15, 2016, ,
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| 9 | Selective epitaxial growth of Ge1-xSnx on Si by using metal organic chemical vapor deposition, T. Washizu, S. Ike, Y. Inuzuka, W. Takeuchi, O. Nakatsuka, S. Zaima, Journal of Crystal Growth, ( 70), 614-619- , Oct. 11, 2016, ,
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| 10 | Analysis of Microscopic Strain and Crystalline Structure in Ge/Ge1-XSnx Fine Structures By Using Synchrotron X-Ray Microdiffraction, S. Ike, O. Nakatsuka, Y. Inuzuka, T. Washizu, W. Takeuchi, Y. Imai, S. Kimura, S. Zaima, ECS Trans. 2016, 75( 8), 769- , Oct. 2, 2016, ,
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| 11 | Effect of GeO2 deposition temperature in atomic layer deposition on electrical properties of Ge gate stack, M. Kanematsu, S. Shibayama, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima, Jpn. J. Appl. Phys., 55, 08PC05- , Jun. 30, 2016, ,
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| 12 | Effect of in situ Sb doping on crystalline and electrical characteristics of n-type Ge1-xSnx epitaxial layer, J. Jeon, T. Asano, Y. Shimura, W. Takeuchi, M. Kurosawa, M. Sakashita, O. Nakatsuka, and S. Zaima, Jpn. J. Appl. Phys., 55, 04EB13- , Mar. 29, 2016, ,
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| 13 | Growth of ultrahigh-Sn-content Ge1-xSnx epitaxial layer and its impact on controlling Schottky barrier height of metal/Ge contact, A. Suzuki, O. Nakatsuka, S. Shibayama, M. Sakashita, W. Takeuchi, M. Kurosawa, and S. Zaima, Jpn. J. Appl. Phys., 55, 04EB12- , Mar. 29, 2016, ,
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| 14 | Influence of precursor gas on SiGe epitaxial material quality in terms of structural and electrical defects, S. Ike, E. Simoen, Y. Shimura, A. Hikavyy, W. Vandervorst, R. Loo, W. Takeuchi, O. Nakatsuka, and S. Zaima, Jpn. J. Appl. Phys., 55, 04EJ11- , Mar. 7, 2016, ,
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| 15 | Effects of nitridation for SiO2/SiC interface on defect properties near the conduction band edge, W. Takeuchi, K. Yamamoto, N. Taoka, M. Sakashita, T. Kanemura, O. Nakatsuka, and S. Zaima, Jpn. J. Appl. Phys., 55, 04ER13- , Mar. 4, 2016, ,
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| 16 | Characterization of crystallinity of Ge1-xSnx epitaxial layers grown using metal-organic chemical vapor deposition, Y. Inuzuka, S. Ike, T. Asano, W. Takeuchi, O. Nakatsuka, S. Zaima, Thin Solid Films, 602( 7), 12- , Mar. 1, 2016, ,
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| 17 | Experimental observation of type-I energy band alignment in lattice-matched Ge1-x-ySixSny/Ge heterostructures, T. Yamaha, S. Shibayama, T. Asano, K. Kato, M. Sakashita, W. Takeuchi, O. Nakatsuka and S. Zaima, Appl. Phys. Lett., 108, 061009- , Feb. 12, 2016, ,
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| 18 | Low thermal budget n-type doping into Ge(001) surface using ultraviolet laser irradiation in phosphoric acid solution, K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, W. Takeuchi, O. Nakatsuka and S. Zaima, Appl. Phys. Lett., 108, 052104- , Feb. 3, 2016, ,
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| 19 | Characterization of Shallow-and Deep-Level Defects in Undoped Ge1-xSnx Epitaxial Layers by Electrical Measurements, W. Takeuchi, T. Asano, Y. Inuzuka, M. Sakashita, O. Nakatsuka and S. Zaima, ECS Journal of Solid State Science and Technology, 5( 4), 3082-3086- , Jan. 1, 2016, ,
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| 20 | Mobility Behavior of Polycrystalline Si1-x-yGexSny Grown on Insulators, T. Ohmura, T. Yamaha, M. Kurosawa, W. Takeuchi, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima, Transactions of the Materials Research Society of Japan, 40( 4), 351-354- , Dec. 4, 2015, ,
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| 21 | Reduction of Schottky barrier height at metal/n-Ge interface by introducing an ultra-high Sn content Ge1-xSnx interlayer, A. Suzuki, O. Nakatsuka, S. Shibayama, M. Sakashita, W. Takeuchi, M. Kurosawa, and S. Zaima, Appl. Phys. Lett., 107, 212103- , Nov. 23, 2015, ,
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| 22 | Challenges of Energy Band Engineering with New Sn-Related Group IV Semiconductor Materials for Future Integrated Circuits, S. Zaima, O. Nakatsuka, T. Yamaha, T. Asano, S. Ike, A. Suzuki, M. Kurosawa, W. Takeuchi, and M. Sakashita, ECS Trans. 2015, 69( 10), 89-98- , Oct. 11, 2015, ,
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| 23 | Effect of Sn on crystallinity and electronic property of low temperature grown polycrystalline-Si1-x-yGexSny layers on SiO2, T. Yamaha, M. Kurosawa, T. Ohmura, W. Takeuchi, N. Taoka, O. Nakatsuka, S. Zaima, Solid-State Electronics, 110, 54-58- , Aug. 1, 2015, ,
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| 24 | Epitaxial growth and crystalline properties of Ge1-x-ySixSny on Ge(0 0 1) substrates, T. Asano, T. Terashima, T. Yamaha, M. Kurosawa, W. Takeuchi, N. Taoka, O. Nakatsuka, S. Zaima, Solid-State Electronics, 110, 49-53- , Aug. 1, 2015, ,
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| 25 | Growth and applications of GeSn-related group-IV semiconductor materials, S. Zaima, O. Nakatsuka, N. Taoka, M. Kurosawa, W. Takeuchi and M. Sakashita, Science and Technology of Advanced Materials, 16( 4), 043502- , Jul. 28, 2015, ,
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| 26 | Growth of Si1-x-ySnxCy ternary alloy layer on Si(001) substrate and characterization of its crystalline properties, T. Yamaha, M. Kurosawa, W. Takeuchi, O. Nakatsuka, and S. Zaima, Jpn. J. Appl. Phys., 54, 08KA11- , Jul. 21, 2015, ,
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| 27 | High hole mobility tin-doped polycrystalline germanium layers formed on insulating substrates by low-temperature solid-phase crystallization, W. Takeuchi, N. Taoka, M. Kurosawa, M. Sakashita, O. Nakatsuka, and S. Zaima, Appl. Phys. Lett., 107, 022103- , Jul. 13, 2015, ,
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| 28 | Epitaxial Ge1-xSnx Layers Grown by Metal-Organic Chemical Vapor Deposition Using Tertiary-butyl-germane and Tri-butyl-vinyl-tin, Y. Inuzuka, S. Ike, T. Asano, W. Takeuchi, N. Taoka, O. Nakatsuka and S. Zaima, ECS Solid State Letters, 4( 8), 59-61- , Jun. 19, 2015, ,
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| 29 | Impact of hydrogen surfactant on crystallinity of Ge1-xSnx epitaxial layers, T. Asano, N. Taoka, K. Hozaki, W. Takeuchi, M. Sakashita, O. Nakatsuka and S. Zaima, Jpn. J. Appl. Phys., 54, 04DH15- , Mar. 23, 2015, ,
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| 30 | Formation, crystalline structure, and optical properties of Ge1-x-ySnxCy ternary alloy layers, T. Yamaha, K. Terasawa, H. Oda, M. Kurosawa, W. Takeuchi, N. Taoka, O. Nakatsuka and S. Zaima, Jpn. J. Appl. Phys., 54, 04DH08- , Feb. 26, 2015, ,
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| 31 | Formation of chemically stable GeO2 on the Ge surface with pulsed metal-organic chemical vapor deposition, S. Shibayama, T. Yoshida, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima, Appl. Phys. Lett., 106, 062107- , Feb. 12, 2015, ,
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| 32 | (Invited) Challenges and Developments in GeSn Process Technology for Si Nanoelectronics, S. Zaima, O. Nakatsuka, N. Taoka, K. Kato, W. Takeuchi, and M. Sakashita, ECS Trans. 2014, 64( 6), 147-153- , Oct. 5, 2014, ,
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| 33 | (Invited) Epitaxial Growth of GeSn Layers on (001), (110), and (111) Si and Ge Substrates, O. Nakatsuka, N. Taoka, T. Asano, T. Yamaha, M. Kurosawa, W. Takeuchi, and S. Zaima, ECS Trans. 2014, 64( 6), 793-799- , Oct. 5, 2014, ,
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| 34 | Robustness of Sn precipitation during thermal oxidation of Ge1-xSnx on Ge(001), K. Kato, T. Asano, N. Taoka, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima, Jpn. J. Appl. Phys., 53( 8S1), 08LD04- , Jul. 24, 2014, ,
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| 35 | Interface properties of Al2O3/Ge structures with thin Ge oxide interfacial layer formed by pulsed metal organic chemical vapor deposition, T. Yoshida, K. Kato, S. Shibayama, M. Sakashita, N. Taoka, W. Takeuchi, O. Nakatsuka, and S. Zaima, Jpn. J. Appl. Phys., 53( 8S1), 08LD03- , Jul. 16, 2014, ,
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| 36 | Importance of Ge surface oxidation with high oxidation rate in obtaining low interface state density at oxide/Ge interfaces, S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima, Jpn. J. Appl. Phys., 53( 8S1), 08LD02- , Jul. 16, 2014, ,
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| 37 | Stabilized formation of tetragonal ZrO2 thin film with high permittivity, K. Kato, T. Saito, S. Shibayama, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, S. Zaima, Thin Solid Films, 557, 192-196- , Apr. 30, 2014, ,
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| 38 | Impacts of AlGeO formation by post thermal oxidation of Al2O3/Ge structure on interfacial properties, S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, S. Zaima, Thin Solid Films, 557, 282-287- , Apr. 30, 2014, ,
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| 39 | Importance of control of oxidant partial pressure on structural and electrical properties of Pr-oxide films, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, S. Zaima, Thin Solid Films, 557, 276-281- , Apr. 30, 2014, ,
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| 40 | Defects Induced by Reactive Ion Etching in Ge Substrate, Kusumandari, N.taoka, W. takeuchi, M. Sakashita, O. Nakatsuka, and S. Zaima, Advanced Materials Research, 896, 241-244- , Feb. 19, 2014, ,
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| 41 | Effect of gate metal on chemical bonding state in metal/Pr-oxide/Ge gate stack structure, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima, Solid-State Electronics, 83, 56-60- , May. 2013, ,
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| 42 | Effects of Light Exposure during Plasma Processing on Electrical Properties of GeO#D2#DR/Ge Structures, Kusumandari, W. Takeuchi, K. Kato, S. Shibayama, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima, Japanese Journal of Applied Physics, 52, 01AC04- , Jan. 2013, ,
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| 43 | Effect of gate metal on chemical bonding state in metal/Pr-oxide/Ge gate stack structure, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima, Solid-State Electron., 82, 56-60- , 2013, ,
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| 44 | Reduction of Interface States Density due to Post Oxidation with Formation of AlGeO Layer at Al2O3/Ge Interface, S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka and S. Zaima, ECS Trans. 2013, 58( 9), 301-380- , 2013, ,
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| 45 | Understanding of interface structures and reaction mechanisms induced by Ge or GeO diffusion in Al2O3/Ge structure, S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima, Appl. Phys. Lett., 103, 082114- , 2013, ,
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| 46 | Broad defect depth distribution in germanium substrates induced by CF4 plasma, Kusumandari, N. Taoka, W. Takeuchi, M. Fukudome, M. Sakashita, O. Nakatsuka, and S. Zaima, Appl. Phys. Lett., 103, 033511- , 2013, ,
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| 47 | Interfacial Reaction Mechanism in Al2O3/Ge Structure by Oxygen Radical, K. Kato, S. Shibayama, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima, Jpn. J. Appl. Phys., 52, 04CA08- , 2013, ,
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| 48 | Development of epitaxial growth technology for Ge1-xSnx alloy and study of its properties for Ge nanoelectronics, O. Nakatsuka, Y. Shimura, W. Takeuchi, N. Taoka, and S. Zaima,, Solid-State Electron., 83, 82-86- , 2013, ,
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| 49 | Effect of Interfacial Reactions in Radical Process on Electrical Properties of Al2O3/Ge Gate Stack Structure", K. Kato, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima,, J. Phys.: Conf. Ser., 417, 012001- , 2013, ,
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| 50 | Suppressive Effect of Interface Reaction and Water Absorption by Al Incorporation into Pr-oxide Film, W Takeuchi, K Furuta, K Kato, M Sakashita, H Kondo, O Nakatsuka and S Zaima,, J. Phys.: Conf. Ser., 417, 012017- , 2013, ,
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| 51 | Characterization of Damage of Al2O3/Ge Gate Stack Structure Induced with Light Radiation during Plasma Nitridation, Kusumandari, W. Takeuchi, K. Kato, S. Shibayama, M. Sakashita, O. Nakatsuka, and S. Zaima, Jpn. J. Appl. Phys., 51, 01AJ01- , 2012, ,
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| 52 | Growth and Characterization of Heteroepitaxial Layers of Ge1-x-ySixSny Ternary Alloy, T. Yamaha, O. Nakatsuka, S. Takeuchi, W. Takeuchi, N. Taoka, K. Araki, K. Izunome, and S. Zaima, ECS Trans., 50, 907-913- , 2012, ,
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| 53 | Growth and Optical Properties of Ge1-xSnx Alloy Thin Films with a High Sn Content, S. Zaima, O. Nakatsuka, M. Nakamura, W. Takeuchi, Y. Shimura, and N. Taoka,, ECS Trans., 50, 897-902- , 2012, ,
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| 54 | Improvement of Al2O3/Ge interfacial properties by O2-annealing, S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima,, Thin Solid Films, 520, 3397-3401- , 2012, ,
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| 55 | Crystalline orientation dependence of electrical properties of Mn Germanide/Ge(1 1 1) and (0 0 1) Schottky contacts, T. Nishimura, O. Nakatsuka, S. Akimoto, W. Takeuchi, and S. Zaima, Microelectronic Engineering, 88, 605-609- , May. 2011, ,
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| 56 | Analysis of Local Leakage Current of Pr-Oxide Thin Films with Conductive Atomic Force Microscopy, M. Adachi, M. Sakashita, H. Kondo, W. Takeuchi, O. Nakatsuka, and S. Zaima, Jpn. J. Appl. Phys., 50, 04DA08- , Apr. 20, 2011, ,
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| 57 | Effect of Pr Valence State on Interfacial Structure and Electrical Properties of Pr Oxide/PrON/Ge Gate Stack Structure, K. Kato, M. Sakashita, W. Takeuchi, H. Kondo, O. Nakatsuka, and S. Zaima, Jpn. J. Appl. Phys., 50, 04DA17- , Apr. 20, 2011, ,
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| 58 | Electron field emission enhancement of carbon nanowalls by plasma surface nitridation, Wakana Takeuchi, Hiroki Kondo, Tomomi Obayashi, Mineo Hiramatsu, and Masaru Hori, Appl. Phys. Lett., 98, 123107- , Mar. 22, 2011, ,
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| 59 | Synchrotron x-ray analyses of crystalline and electronic structures of carbon nanowalls, H. Kondo, W. Takeuchi, M. Hori, S. Kimura, Y. Kato, T. Muro, T. Kinoshita, O. Sakata, H. Tajiri, and M. Hiramatsu, Appl. Phys. Lett., 99, 213110- , 2011, ,
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| 60 | Controlled Synthesis of Carbon Nanowalls for Carbon Channel Engineering, Hiroki Kondo, Masaru Hori, Wakana Takeuchi, Mineo Hiramatsu, Key Engineering Materials, 470, 85-91- , 2011, ,
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| 61 | Control of Interfacial Properties of Al2O3/Ge Gate Stack Structure using Radical Nitridation Technique, K. Kato, S. Kyogoku, M. Sakashita, W. Takeuchi, H. Kondo, S. Takeuchi, O. Nakatsuka, and S. Zaima, Jpn. J. Appl. Phys, 50, 10PE02- , 2011, ,
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| 62 | Optical Properties of Evolutionary Grown Layers of Carbon Nanowalls Analyzed by Spectroscopic Ellipsometry, Shinji Kawai, Shingo Kondo, Wakana Takeuchi, Hiroki Kondo, Mineo Hiramatsu, Masaru Hori, Japanese Journal of Applied Physics, 49, 060220- , 2010, ,
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| 63 | Monolithic self-sustaining nanographene sheet grown using plasma-enhanced chemical vapor deposition, Wakana Takeuchi, Keigo Takeda, Mineo Hiramatsu, Yutaka Tokuda, Hiroyuki Kano, Shigeru Kimura, Osami Sakata, Hiroo Tajiri, and Masaru Hori, Phys. Status Solidi, A207( 1), 139-143- , 2010, ,
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| 64 | Initial Growth Process of Carbon Nanowalls Synthesized by Radical Injection Plasma-enhanced Chemical Vapor Deposition, S. Kondo, S. Kawai, W. Takeuchi, K.Yamakawa, S. Den, H. Kano, M. Hiramatsu and M. Hori, J. Appl. Phys., 106, 094302-1-094302-6- , 2009, ,
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| 65 | Development of measurement technique for carbon atoms employing vacuum ultraviolet absorption spectroscopy with a microdischarge hollow cathode lamp and its application to diagnostics of nanographene sheet material formation plasmas, W. Takeuchi, H. Sasaki, S.Kato, S. Takashima, M. Hiramatsu and M. Hori, J. Appl. Phys., 105, 113305 -1-113305 -6- , 2009, ,
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| 66 | Synthesis of Platinum Nanoparticles on Two-Dimensional Carbon Nanostructures with an Ultrahigh Aspect Ratio Employing Supercritical Fluid Chemical Vapor Deposition Process, T. Machino, W. Takeuchi, H. Kano, M. Hiramatsu and M. Hori, Appl. Phys. Express, 2, 025001-1-025001-3- , 2009, ,
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| 67 | Electrical conduction control of carbon nanowalls, W. Takeuchi, M. Ura, M.Hiramatsu, Y. Tokuda, H.Kano and M. Hori, Appl. Phys. Lett., 92, 213103-1- 213103-3- , 2008, ,
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| 68 | Inductively coupled plasma induce defects in n-type characteristics GaN studied from Schottky diode, W. Nakamura, Y. Tokuda, H. Ueda and T. Kachi, Physica B, 376-377, 516-519- , 2006, ,
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| 69 | Deep-Level Transient Spectroscopy Studies of Filling Behavior of a Hydrogen-Related Metastable Defect in n-Type Sillicon, Y. Tokuda, W. Nakamura, K. Nakashima and H. Iwata, Jpn J. Appl. Phys., 44( 6A), 3789-3792- , 2005, ,
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