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愛知工業大学
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竹内 和歌奈 (タケウチ ワカナ,TAKEUCHI Wakana)

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論文
No.タイトル, 著者, 誌名, 巻( 号), 開始ページ- 終了ページ, 出版年月, ID:DOI, URL 
1
Biocompatibility of conformal silicon carbide on carbon nanowall scaffolds, K. Ono , T. Koide, K. Ishikawa, H. Tanaka, H. Kondo, A. Sugawara-Narutaki , Y. Jin , S. Yasuhara , M. Hori , and W. Takeuchi, Jpn. J. Appl. Phys., ,   , 2022年09月20日, ,  
2
Visualization of local strain in 4H-SiC trench metal-oxide-semiconductor field-effect transistor using synchrotron nanobeam X-ray diffraction, W. Takeuchi, E. Kagoshima, K. Sumitani, Y. Imai, S. Shibayama, M. Sakashita, S. Kimura, H. Tomita, T. Nishiwaki, H. Fujiwara, and O Nakatsuka, Jpn. J. Appl. Phys., 61,  SC1072- , 2022年03月21日, ,  
3
Enhancement of channel mobility in 4H-SiC trench MOSFET by inducing stress at SiO2/SiC gate interface, E. Kagoshima, W. Takeuchi, K. Kutsuki, M. Sakashita, H. Fujiwara, and O. Nakatsuka, Jpn. J. Appl. Phys., 61,  SC1068- , 2022年03月02日, ,  
4
Impact of byproducts formed on a 4H–SiC surface on interface state density of Al2O3/4H–SiC(0001) gate stacks, T. Doi, S. Shibayama, W. Takeuchi, M. Sakashita, N. Taoka, M. Shimizu, and O. Nakatsuka, ECS Trans., 98( 5), 169- , 2020年09月, ,  
5
Effect of carbon in Si oxide interlayers of the Al2O3/4H-SiC structure on interfacial reaction by oxygen radical treatment, T. Doi, W. Takeuchi, S. Shibayama, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima, Jpn. J. Appl. Phys., 58,  SBBD05- , 2019年02月22日, ,  
6
Mobility Enhancement by Mechanical Uniaxial Stress on 4H-SiC (0001) Lateral Metal-oxide-semiconductor Field-effect-transistor (submitted), W Takeuchi, K. Kutsuki, E. Kagoshima, T. Onishi, S. Iwasaki, M. Sakashita, H. Fujiwara, O. Nakatsuka, Jpn. J. Appl. Phys., 59( SG), SGGD08- , 2019年02月06日, ,  
7
Influence of Sn precursors on Ge1-xSnx growth using metal-organic chemical vapor deposition, Y. Miki, W. Takeuchi, O. Nakatsuka, and S. Zaima, Jpn. J. Appl. Phys., 58( SA), SAAD07- , 2018年12月14日, ,  
8
Epitaxial growth of heavily doped n+-Ge layers using metal-organic chemical vapor deposition with in situ phosphorus doping, S. Ike, W. Takeuchi, O. Nakatsuka, and S. Zaima, Thin Solid Films, 645,  57- , 2018年01月01日, ,  
9
In situ phosphorus-doped Ge1-xSnx layers grown using low-temperature metal-organic chemical vapor deposition, S. Ike, W. Takeuchi, O. Nakatsuka, and S. Zaima, Semicond. Sci. Tech., 32,  124001- , 2017年10月26日, ,  
10
Ge1-xSnxゲートスタック構造における欠陥の物性評価, 金田裕一, 池進一, 兼松正行, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明, 信学技報 IEICE Technical Report, ,  00- , 2017年06月13日, ,  
11
Formation of SiC thin films by chemical vapor deposition with vinylsilane precursor, T. Doi, W. Takeuchi, Y. Jin, H. Kokubun, S. Yasuhara, O. Nakatsuka, and S. Zaima, Jpn. J. Appl. Phys., 57( 1S), 01AE08- , 2017年, ,  
12
Selective growth of Ge1-xSnx epitaxial layer on patterned SiO2/Si substrate by metal-organic chemical vapor deposition, W. Takeuchi, T. Washizu, S. Ike, O. Nakatsuka, and S. Zaima, Jpn. J. Appl. Phys., 57( 1S), 01AC05- , 2017年, ,  
13
Effect of N bonding structure in AlON deposited by plasma-assisted atomic layer deposition on electrical properties of 4H-SiC MOS capacitor, W. Takeuchi, K. Yamamoto, M. Sakashita, O. Nakatsuka, and S. Zaima, Jpn. J. Appl. Phys., 57( 1S), 01AE06- , 2017年, ,  
14
Low-temperature crystallization of Ge-rich GeSn layers on Si3N4 substrate, I. Yoshikawa, M. Kurosawa, W. Takeuchi, M. Sakashita, O. Nakatsuka, S. Zaima, Materials Science in Semiconductor Processing, ( 70), 151-155- , 2016年12月, ,  
15
Solid-phase crystallization of Si1-x-ySnxCy ternary alloy layers and characterization of their crystalline and optical properties, S. Yano, T. Yamaha, Y. Shimura, W. Takeuchi, M. Sakashita, M. Kurosawa, O. Nakatsuka and S. Zaima, Jpn. J. Appl. Phys., 56,  01AB02- , 2016年11月30日, ,  
16
EXAFS study of local structure contributing to Sn stability in SiyGe1-y-zSnz, Y. Shimura, T. Asano, T. Yamaha, M. Fukuda, W. Takeuchi, O. Nakatsuka, S. Zaima, Materials Science in Semiconductor Processing, ( 468), 133-138- , 2016年11月15日, ,  
17
Selective epitaxial growth of Ge1-xSnx on Si by using metal organic chemical vapor deposition, T. Washizu, S. Ike, Y. Inuzuka, W. Takeuchi, O. Nakatsuka, S. Zaima, Journal of Crystal Growth, ( 70), 614-619- , 2016年10月11日, ,  
18
Analysis of Microscopic Strain and Crystalline Structure in Ge/Ge1-XSnx Fine Structures By Using Synchrotron X-Ray Microdiffraction, S. Ike, O. Nakatsuka, Y. Inuzuka, T. Washizu, W. Takeuchi, Y. Imai, S. Kimura, S. Zaima, ECS Trans. 2016, 75( 8), 769- , 2016年10月02日, ,  
19
Effect of GeO2 deposition temperature in atomic layer deposition on electrical properties of Ge gate stack, M. Kanematsu, S. Shibayama, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima, Jpn. J. Appl. Phys., 55,  08PC05- , 2016年06月30日, ,  
20
Ge基板上エピタキシャルGeSn膜の電気的活性な欠陥の評価, 金田裕一, 兼松正行, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明, 信学技報 IEICE Technical Report, 116( 118), 37- , 2016年06月29日, ,  
21
Sn系IV族半導体混晶薄膜の成長と物性評価, 志村洋介, 竹内和歌奈, 坂下満男, 黒澤昌志, 中塚理, 財満鎭明, 信学技報 IEICE Technical Report, 116( 1), 23- , 2016年04月01日, ,  
22
Effect of in situ Sb doping on crystalline and electrical characteristics of n-type Ge1-xSnx epitaxial layer, J. Jeon, T. Asano, Y. Shimura, W. Takeuchi, M. Kurosawa, M. Sakashita, O. Nakatsuka, and S. Zaima, Jpn. J. Appl. Phys., 55,  04EB13- , 2016年03月29日, ,  
23
Growth of ultrahigh-Sn-content Ge1-xSnx epitaxial layer and its impact on controlling Schottky barrier height of metal/Ge contact, A. Suzuki, O. Nakatsuka, S. Shibayama, M. Sakashita, W. Takeuchi, M. Kurosawa, and S. Zaima, Jpn. J. Appl. Phys., 55,  04EB12- , 2016年03月29日, ,  
24
Influence of precursor gas on SiGe epitaxial material quality in terms of structural and electrical defects, S. Ike, E. Simoen, Y. Shimura, A. Hikavyy, W. Vandervorst, R. Loo, W. Takeuchi, O. Nakatsuka, and S. Zaima, Jpn. J. Appl. Phys., 55,  04EJ11- , 2016年03月07日, ,  
25
Effects of nitridation for SiO2/SiC interface on defect properties near the conduction band edge, W. Takeuchi, K. Yamamoto, N. Taoka, M. Sakashita, T. Kanemura, O. Nakatsuka, and S. Zaima, Jpn. J. Appl. Phys., 55,  04ER13- , 2016年03月04日, ,  
26
Characterization of crystallinity of Ge1-xSnx epitaxial layers grown using metal-organic chemical vapor deposition, Y. Inuzuka, S. Ike, T. Asano, W. Takeuchi, O. Nakatsuka, S. Zaima, Thin Solid Films, 602( 7), 12- , 2016年03月01日, ,  
27
Experimental observation of type-I energy band alignment in lattice-matched Ge1-x-ySixSny/Ge heterostructures, T. Yamaha, S. Shibayama, T. Asano, K. Kato, M. Sakashita, W. Takeuchi, O. Nakatsuka and S. Zaima, Appl. Phys. Lett., 108,  061009- , 2016年02月12日, ,  
28
Low thermal budget n-type doping into Ge(001) surface using ultraviolet laser irradiation in phosphoric acid solution, K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, W. Takeuchi, O. Nakatsuka and S. Zaima, Appl. Phys. Lett., 108,  052104- , 2016年02月03日, ,  
29
原子層堆積法を用いたGeO2/Ge界面形成および欠陥の堆積温度依存性, 兼松正行, 柴山茂久, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明, 応用物理学会 薄膜・表面物理分科会・シリコンテクノロジー分科会共催特別研究会研究報告「電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―」(第21回), ( 5), 8- , 2016年01月22日, ,  
30
界面エネルギー制御による絶縁膜上GeSn薄膜の低温結晶成長, 吉川勲, 黒澤昌志, 竹内和歌奈, 坂下満男, 中塚理, 財満鎭明, 応用物理学会 薄膜・表面物理分科会・シリコンテクノロジー分科会共催特別研究会研究報告「電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―」(第21回), ( 21), 24- , 2016年01月22日, ,  
31
Characterization of Shallow-and Deep-Level Defects in Undoped Ge1-xSnx Epitaxial Layers by Electrical Measurements, W. Takeuchi, T. Asano, Y. Inuzuka, M. Sakashita, O. Nakatsuka and S. Zaima, ECS Journal of Solid State Science and Technology, 5( 4), 3082-3086- , 2016年01月01日, ,  
32
Mobility Behavior of Polycrystalline Si1-x-yGexSny Grown on Insulators, T. Ohmura, T. Yamaha, M. Kurosawa, W. Takeuchi, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima, Transactions of the Materials Research Society of Japan, 40( 4), 351-354- , 2015年12月04日, ,  
33
Reduction of Schottky barrier height at metal/n-Ge interface by introducing an ultra-high Sn content Ge1-xSnx interlayer, A. Suzuki, O. Nakatsuka, S. Shibayama, M. Sakashita, W. Takeuchi, M. Kurosawa, and S. Zaima, Appl. Phys. Lett., 107,  212103- , 2015年11月23日, ,  
34
Challenges of Energy Band Engineering with New Sn-Related Group IV Semiconductor Materials for Future Integrated Circuits, S. Zaima, O. Nakatsuka, T. Yamaha, T. Asano, S. Ike, A. Suzuki, M. Kurosawa, W. Takeuchi, and M. Sakashita, ECS Trans. 2015, 69( 10), 89-98- , 2015年10月11日, ,  
35
Effect of Sn on crystallinity and electronic property of low temperature grown polycrystalline-Si1-x-yGexSny layers on SiO2, T. Yamaha, M. Kurosawa, T. Ohmura, W. Takeuchi, N. Taoka, O. Nakatsuka, S. Zaima, Solid-State Electronics, 110,  54-58- , 2015年08月01日, ,  
36
Epitaxial growth and crystalline properties of Ge1-x-ySixSny on Ge(0 0 1) substrates, T. Asano, T. Terashima, T. Yamaha, M. Kurosawa, W. Takeuchi, N. Taoka, O. Nakatsuka, S. Zaima, Solid-State Electronics, 110,  49-53- , 2015年08月01日, ,  
37
Growth and applications of GeSn-related group-IV semiconductor materials, S. Zaima, O. Nakatsuka, N. Taoka, M. Kurosawa, W. Takeuchi and M. Sakashita, Science and Technology of Advanced Materials, 16( 4), 043502- , 2015年07月28日, ,  
38
Growth of Si1-x-ySnxCy ternary alloy layer on Si(001) substrate and characterization of its crystalline properties, T. Yamaha, M. Kurosawa, W. Takeuchi, O. Nakatsuka, and S. Zaima, Jpn. J. Appl. Phys., 54,  08KA11- , 2015年07月21日, ,  
39
High hole mobility tin-doped polycrystalline germanium layers formed on insulating substrates by low-temperature solid-phase crystallization, W. Takeuchi, N. Taoka, M. Kurosawa, M. Sakashita, O. Nakatsuka, and S. Zaima, Appl. Phys. Lett., 107,  022103- , 2015年07月13日, ,  
40
Epitaxial Ge1-xSnx Layers Grown by Metal-Organic Chemical Vapor Deposition Using Tertiary-butyl-germane and Tri-butyl-vinyl-tin, Y. Inuzuka, S. Ike, T. Asano, W. Takeuchi, N. Taoka, O. Nakatsuka and S. Zaima, ECS Solid State Letters, 4( 8), 59-61- , 2015年06月19日, ,  
41
Ge1-xSnxエピタキシャル層中の欠陥へ及ぼす熱処理の効果, 浅野孝典, 柴山茂久, 竹内和歌奈, 坂下満男, 中塚理, 財満鎭明, 信学技報 IEICE Technical Report, 115( 108), 63-68- , 2015年06月12日, ,  
42
SiO2/SiC MOS界面の欠陥特性に酸窒化処理が与える影響, 竹内和歌奈, 山本建策, 坂下満男, 金村髙司, 中塚理, 財満鎭明, 信学技報 IEICE Technical Report, 115( 108), 27-30- , 2015年06月12日, ,  
43
金属/Ge界面への超高Sn組成SnxGe1-x層導入による界面電気伝導特性の制御, 鈴木陽洋, 柴山茂久, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明, 信学技報 IEICE Technical Report, 115( 108), 57-61- , 2015年06月12日, ,  
44
高Sn組成SiSnの形成とバンド構造 -直接遷移構造化を目指して-, 黒澤昌志, 竹内和歌奈, 坂下満男, 中塚理, 財満鎭明, 信学技報 IEICE Technical Report, 115( 18), 35-37- , 2015年04月22日, ,  
45
Impact of hydrogen surfactant on crystallinity of Ge1-xSnx epitaxial layers, T. Asano, N. Taoka, K. Hozaki, W. Takeuchi, M. Sakashita, O. Nakatsuka and S. Zaima, Jpn. J. Appl. Phys., 54,  04DH15- , 2015年03月23日, ,  
46
Formation, crystalline structure, and optical properties of Ge1-x-ySnxCy ternary alloy layers, T. Yamaha, K. Terasawa, H. Oda, M. Kurosawa, W. Takeuchi, N. Taoka, O. Nakatsuka and S. Zaima, Jpn. J. Appl. Phys., 54,  04DH08- , 2015年02月26日, ,  
47
Formation of chemically stable GeO2 on the Ge surface with pulsed metal-organic chemical vapor deposition, S. Shibayama, T. Yoshida, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima, Appl. Phys. Lett., 106,  062107- , 2015年02月12日, ,  
48
GeO2薄膜の正方晶形成による化学的安定性の向上, 柴山茂久, 吉田鉄兵, 加藤公彦, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明, 応用物理学会 薄膜・表面物理分科会、シリコンテクノロジー分科会 共催 特別研究会「ゲートスタック研究会 ─材料・プロセス・評価の物理─」第20回記念研究会研究報告, ,  185-188- , 2015年01月30日, ,  
49
Sn/Geコンタクトにおけるフェルミレベルピニングの軽減およびショットキー障壁高さの低減, 鈴木陽洋, 柴山茂久, 黒澤昌志, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明, 応用物理学会 薄膜・表面物理分科会、シリコンテクノロジー分科会 共催 特別研究会「ゲートスタック研究会 ─材料・プロセス・評価の物理─」第20回記念研究会研究報告, ,  59-62- , 2015年01月30日, ,  
50
(Invited) Epitaxial Growth of GeSn Layers on (001), (110), and (111) Si and Ge Substrates, O. Nakatsuka, N. Taoka, T. Asano, T. Yamaha, M. Kurosawa, W. Takeuchi, and S. Zaima, ECS Trans. 2014, 64( 6), 793-799- , 2014年10月05日, ,  
51
(Invited) Challenges and Developments in GeSn Process Technology for Si Nanoelectronics, S. Zaima, O. Nakatsuka, N. Taoka, K. Kato, W. Takeuchi, and M. Sakashita, ECS Trans. 2014, 64( 6), 147-153- , 2014年10月05日, ,  
52
Robustness of Sn precipitation during thermal oxidation of Ge1-xSnx on Ge(001), K. Kato, T. Asano, N. Taoka, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima, Jpn. J. Appl. Phys., 53( 8S1), 08LD04- , 2014年07月24日, ,  
53
Importance of Ge surface oxidation with high oxidation rate in obtaining low interface state density at oxide/Ge interfaces, S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima, Jpn. J. Appl. Phys., 53( 8S1), 08LD02- , 2014年07月16日, ,  
54
Interface properties of Al2O3/Ge structures with thin Ge oxide interfacial layer formed by pulsed metal organic chemical vapor deposition, T. Yoshida, K. Kato, S. Shibayama, M. Sakashita, N. Taoka, W. Takeuchi, O. Nakatsuka, and S. Zaima, Jpn. J. Appl. Phys., 53( 8S1), 08LD03- , 2014年07月16日, ,  
55
絶縁膜上におけるIV族半導体多結晶薄膜の低温形成 ~ 低融点Snの活用 ~, 黒澤昌志, 田岡紀之, 池上浩, 竹内和歌奈, 坂下満男, 中塚理, 財満鎭明, 信学技報(IEICE Technical Report), 114( 88), 91-95- , 2014年06月, ,  
56
n型Ge単結晶中におけるSnと空孔関連欠陥との相互作用, 竹内和歌奈, 田岡紀之, 坂下満男, 中塚理, 財満鎭明, 信学技報(IEICE Technical Report), 114( 56), 133-118- , 2014年05月21日, ,  
57
Impacts of AlGeO formation by post thermal oxidation of Al2O3/Ge structure on interfacial properties, S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, S. Zaima, Thin Solid Films, 557,  282-287- , 2014年04月30日, ,  
58
Importance of control of oxidant partial pressure on structural and electrical properties of Pr-oxide films, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, S. Zaima, Thin Solid Films, 557,  276-281- , 2014年04月30日, ,  
59
Stabilized formation of tetragonal ZrO2 thin film with high permittivity, K. Kato, T. Saito, S. Shibayama, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, S. Zaima, Thin Solid Films, 557,  192-196- , 2014年04月30日, ,  
60
Defects Induced by Reactive Ion Etching in Ge Substrate, Kusumandari, N.taoka, W. takeuchi, M. Sakashita, O. Nakatsuka, and S. Zaima, Advanced Materials Research, 896,  241-244- , 2014年02月19日, ,  
61
固溶限を超えるSn組成を有するGe1-xSnx層中におけるSn原子の熱安定性, 加藤公彦, 浅野孝典, 田岡紀之, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明, 特別研究会「ゲートスタック研究会 ─材料・プロセス・評価の物理─」第19回研究会研究報告, ,  37-40- , 2014年01月24日, ,  
62
低界面準位密度を有するGe MOS構造を実現するGe表面の酸化条件, 柴山茂久, 加藤公彦, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明, 特別研究会「ゲートスタック研究会 ─材料・プロセス・評価の物理─」第19回研究会研究報告, ,  13-16- , 2014年01月24日, ,  
63
MOCVD法により形成した極薄GeO2を用いたAl2O3/GeOx/Ge構造の電気的特性および構造評価, 吉田鉄兵, 加藤公彦, 柴山茂久, 坂下満男, 田岡紀之, 竹内和歌奈, 中塚理, 財満鎭明, 特別研究会「ゲートスタック研究会 ─材料・プロセス・評価の物理─」第19回研究会研究報告, ,  131-134- , 2014年01月24日, ,  
64
Al2O3/Ge構造における酸化機構の解明と界面反応がその特性に及ぼす影響, 柴山茂久, 加藤公彦, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明, 信学技報(IEICE Technical Report), 113( 87), 13-18- , 2013年06月11日, ,  
65
テトラエトキシゲルマニウムによる極薄GeO2膜の形成, 吉田鉄兵, 加藤公彦, 柴山茂久, 坂下満男, 田岡紀之, 竹内和歌奈, 中塚理, 財満鎭明, 信学技報(IEICE Technical Report), 113( 87), 7-11- , 2013年06月11日, ,  
66
酸化剤分圧およびSi拡散の制御によるPr酸化膜結晶構造制御, 加藤公彦, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明, 信学技報(IEICE Technical Report), 113( 87), 1-6- , 2013年06月11日, ,  
67
Effect of gate metal on chemical bonding state in metal/Pr-oxide/Ge gate stack structure, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima, Solid-State Electronics, 83,  56-60- , 2013年05月, ,  
68
Effects of Light Exposure during Plasma Processing on Electrical Properties of GeO#D2#DR/Ge Structures, Kusumandari, W. Takeuchi, K. Kato, S. Shibayama, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima, Japanese Journal of Applied Physics, 52,  01AC04- , 2013年01月, ,  
69
Suppressive Effect of Interface Reaction and Water Absorption by Al Incorporation into Pr-oxide Film, W Takeuchi, K Furuta, K Kato, M Sakashita, H Kondo, O Nakatsuka and S Zaima,, J. Phys.: Conf. Ser., 417,  012017- , 2013年, ,  
70
Reduction of Interface States Density due to Post Oxidation with Formation of AlGeO Layer at Al2O3/Ge Interface, S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka and S. Zaima, ECS Trans. 2013, 58( 9), 301-380- , 2013年, ,  
71
Pr 酸化膜/Ge構造におけるゲート金属が界面反応に与える影響, 加藤公彦, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明, 特別研究会 「ゲートスタック研究会 ─材料・プロセス・評価の物理─」(第18回研究会), ,  155-158- , 2013年, ,  
72
テトラエトキシゲルマニウムを用いた極薄Ge酸化膜の形成, 吉田鉄兵, 加藤公彦, 柴山茂久, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明, 特別研究会 「ゲートスタック研究会 ─材料・プロセス・評価の物理─」(第18回研究会), ,  151-154- , 2013年, ,  
73
Understanding of interface structures and reaction mechanisms induced by Ge or GeO diffusion in Al2O3/Ge structure, S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima, Appl. Phys. Lett., 103,  082114- , 2013年, ,  
74
Broad defect depth distribution in germanium substrates induced by CF4 plasma, Kusumandari, N. Taoka, W. Takeuchi, M. Fukudome, M. Sakashita, O. Nakatsuka, and S. Zaima, Appl. Phys. Lett., 103,  033511- , 2013年, ,  
75
Interfacial Reaction Mechanism in Al2O3/Ge Structure by Oxygen Radical, K. Kato, S. Shibayama, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima, Jpn. J. Appl. Phys., 52,  04CA08- , 2013年, ,  
76
Development of epitaxial growth technology for Ge1-xSnx alloy and study of its properties for Ge nanoelectronics, O. Nakatsuka, Y. Shimura, W. Takeuchi, N. Taoka, and S. Zaima,, Solid-State Electron., 83,  82-86- , 2013年, ,  
77
Effect of gate metal on chemical bonding state in metal/Pr-oxide/Ge gate stack structure, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima, Solid-State Electron., 82,  56-60- , 2013年, ,  
78
Effect of Interfacial Reactions in Radical Process on Electrical Properties of Al2O3/Ge Gate Stack Structure", K. Kato, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima,, J. Phys.: Conf. Ser., 417,  012001- , 2013年, ,  
79
Al2O3/Ge構造に対する熱酸化機構の解明, 柴山茂久, 加藤公彦, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明,, 特別研究会 「ゲートスタック研究会 ─材料・プロセス・評価の物理─」(第18回研究会), ,  39-42- , 2013年, ,  
80
Al2O3/Ge に対する酸素熱処理が電気的特性および化学結合状態に与える効果, 柴山 茂久, 加藤 公彦, 坂下 満男, 竹内 和歌奈, 中塚 理, 財満 鎭明, 特別研究会 「ゲートスタック研究会 ─材料・プロセス・評価の物理─」(第17回研究会), ,  129-132- , 2012年, ,  
81
ジカルプロセスによるAl2O3/Ge界面特性の改善, 加藤公彦, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明, 特別研究会 「ゲートスタック研究会 ─材料・プロセス・評価の物理─」(第17回研究会), ,  125-128- , 2012年, ,  
82
Characterization of Damage of Al2O3/Ge Gate Stack Structure Induced with Light Radiation during Plasma Nitridation, Kusumandari, W. Takeuchi, K. Kato, S. Shibayama, M. Sakashita, O. Nakatsuka, and S. Zaima, Jpn. J. Appl. Phys., 51,  01AJ01- , 2012年, ,  
83
Improvement of Al2O3/Ge interfacial properties by O2-annealing, S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima,, Thin Solid Films, 520,  3397-3401- , 2012年, ,  
84
Growth and Optical Properties of Ge1-xSnx Alloy Thin Films with a High Sn Content, S. Zaima, O. Nakatsuka, M. Nakamura, W. Takeuchi, Y. Shimura, and N. Taoka,, ECS Trans., 50,  897-902- , 2012年, ,  
85
ゲート電極の還元性がGe基板上Pr酸化膜のPr価数に与える影響, 加藤公彦, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明, 信学技報, 112,  37-42- , 2012年, ,  
86
Growth and Characterization of Heteroepitaxial Layers of Ge1-x-ySixSny Ternary Alloy, T. Yamaha, O. Nakatsuka, S. Takeuchi, W. Takeuchi, N. Taoka, K. Araki, K. Izunome, and S. Zaima, ECS Trans., 50,  907-913- , 2012年, ,  
87
Al2O3/Ge構造への酸素熱処理および酸素ラジカル処理による界面反応機構の解明, 柴山茂久, 加藤公彦, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明, 信学技報, 112,  27-32- , 2012年, ,  
88
Crystalline orientation dependence of electrical properties of Mn Germanide/Ge(1 1 1) and (0 0 1) Schottky contacts, T. Nishimura, O. Nakatsuka, S. Akimoto, W. Takeuchi, and S. Zaima, Microelectronic Engineering, 88,  605-609- , 2011年05月, ,  
89
Effect of Pr Valence State on Interfacial Structure and Electrical Properties of Pr Oxide/PrON/Ge Gate Stack Structure, K. Kato, M. Sakashita, W. Takeuchi, H. Kondo, O. Nakatsuka, and S. Zaima, Jpn. J. Appl. Phys., 50,  04DA17- , 2011年04月20日, ,  
90
Analysis of Local Leakage Current of Pr-Oxide Thin Films with Conductive Atomic Force Microscopy, M. Adachi, M. Sakashita, H. Kondo, W. Takeuchi, O. Nakatsuka, and S. Zaima, Jpn. J. Appl. Phys., 50,  04DA08- , 2011年04月20日, ,  
91
Electron field emission enhancement of carbon nanowalls by plasma surface nitridation, Wakana Takeuchi, Hiroki Kondo, Tomomi Obayashi, Mineo Hiramatsu, and Masaru Hori, Appl. Phys. Lett., 98,  123107- , 2011年03月22日, ,  
92
Pr酸化膜/PrON/Ge構造におけるPrの化学結合状態が電気的特性に及ぼす影響, 加藤公彦, 坂下満男, 竹内和歌奈, 近藤博基, 中塚理, 財満鎭明, 特別研究会研究報告“ゲートスタック研究会 -材料・プロセス・評価の物理-”(第16回研究会), ,  99-102- , 2011年, ,  
93
電流検出型原子間力顕微鏡を用いた欠陥に起因するPr酸化膜のリーク電流機構の解明, 足立正樹, 加藤雄三, 坂下満男, 竹内和歌奈, 近藤博基, 中塚理, 財満鎭明, 特別研究会研究報告“ゲートスタック研究会 -材料・プロセス・評価の物理-”(第16回研究会), ,  123-126- , 2011年, ,  
94
Controlled Synthesis of Carbon Nanowalls for Carbon Channel Engineering, Hiroki Kondo, Masaru Hori, Wakana Takeuchi, Mineo Hiramatsu, Key Engineering Materials, 470,  85-91- , 2011年, ,  
95
Synchrotron x-ray analyses of crystalline and electronic structures of carbon nanowalls, H. Kondo, W. Takeuchi, M. Hori, S. Kimura, Y. Kato, T. Muro, T. Kinoshita, O. Sakata, H. Tajiri, and M. Hiramatsu, Appl. Phys. Lett., 99,  213110- , 2011年, ,  
96
Control of Interfacial Properties of Al2O3/Ge Gate Stack Structure using Radical Nitridation Technique, K. Kato, S. Kyogoku, M. Sakashita, W. Takeuchi, H. Kondo, S. Takeuchi, O. Nakatsuka, and S. Zaima, Jpn. J. Appl. Phys, 50,  10PE02- , 2011年, ,  
97
Pr酸化膜/Si構造へのAl導入による界面反応抑制効果, 田和也, 竹内和歌奈, 加藤公彦, 坂下満男, 近藤博基, 中塚理, 財満鎭明, 特別研究会研究報告“ゲートスタック研究会 -材料・プロセス・評価の物理-”(第16回研究会), ,  51-54- , 2011年, ,  
98
Al2O3界面層およびラジカル窒化法によるHigh-k/Ge界面構造および電気的特性の制御, 加藤公彦, 京極真也, 坂下満男, 竹内和歌奈, 近藤博基, 中塚理, 財満鎭明, 特別研究会研究報告“ゲートスタック研究会 -材料・プロセス・評価の物理-”(第16回研究会), ,  55-58- , 2011年, ,  
99
Optical Properties of Evolutionary Grown Layers of Carbon Nanowalls Analyzed by Spectroscopic Ellipsometry, Shinji Kawai, Shingo Kondo, Wakana Takeuchi, Hiroki Kondo, Mineo Hiramatsu, Masaru Hori, Japanese Journal of Applied Physics, 49,  060220- , 2010年, ,  
100
Monolithic self-sustaining nanographene sheet grown using plasma-enhanced chemical vapor deposition, Wakana Takeuchi, Keigo Takeda, Mineo Hiramatsu, Yutaka Tokuda, Hiroyuki Kano, Shigeru Kimura, Osami Sakata, Hiroo Tajiri, and Masaru Hori, Phys. Status Solidi, A207( 1), 139-143- , 2010年, ,  
101
Synthesis of Platinum Nanoparticles on Two-Dimensional Carbon Nanostructures with an Ultrahigh Aspect Ratio Employing Supercritical Fluid Chemical Vapor Deposition Process, T. Machino, W. Takeuchi, H. Kano, M. Hiramatsu and M. Hori, Appl. Phys. Express, 2,  025001-1-025001-3- , 2009年, ,  
102
Development of measurement technique for carbon atoms employing vacuum ultraviolet absorption spectroscopy with a microdischarge hollow cathode lamp and its application to diagnostics of nanographene sheet material formation plasmas, W. Takeuchi, H. Sasaki, S.Kato, S. Takashima, M. Hiramatsu and M. Hori, J. Appl. Phys., 105,  113305 -1-113305 -6- , 2009年, ,  
103
Initial Growth Process of Carbon Nanowalls Synthesized by Radical Injection Plasma-enhanced Chemical Vapor Deposition, S. Kondo, S. Kawai, W. Takeuchi, K.Yamakawa, S. Den, H. Kano, M. Hiramatsu and M. Hori, J. Appl. Phys., 106,  094302-1-094302-6- , 2009年, ,  
104
Electrical conduction control of carbon nanowalls, W. Takeuchi, M. Ura, M.Hiramatsu, Y. Tokuda, H.Kano and M. Hori, Appl. Phys. Lett., 92,  213103-1- 213103-3- , 2008年, ,  
105
Inductively coupled plasma induce defects in n-type characteristics GaN studied from Schottky diode, W. Nakamura, Y. Tokuda, H. Ueda and T. Kachi, Physica B, 376-377,  516-519- , 2006年, ,  
106
Deep-Level Transient Spectroscopy Studies of Filling Behavior of a Hydrogen-Related Metastable Defect in n-Type Sillicon, Y. Tokuda, W. Nakamura, K. Nakashima and H. Iwata, Jpn J. Appl. Phys., 44( 6A), 3789-3792- , 2005年, ,  

 

講演・口頭発表等
No.タイトル, 講演者, 会議名, 開催地, 開催年月日, 主催者 
1
Effects of post-formation treatment on electrical properties in 4H-SiC MOS capacitors, W. Takeuchi, T. Doi, S. Shibayama, M. Sakashita, O. Nakatsuka, International Conference on PROCESSING & MANUFACTURING OF ADVANCED MATERIALS (THERMEC'2020), Austria, 2021年05月10日,  
2
Development of in-situ cyclic metal layer oxidation to form abrupt Al2O3/4H-SiC interface, T. Doi, S. Shibayama, W. Takeuchi, M. Sakashita, N. Taoka, M. Shimizu and O. Nakatsuka, International Conference on Materials and Systems for Sustainability 2019 (ICMaSS 2019), JP : 日本国, 2020年11月02日,  
3
Crystal Growth of Epitaxial 3C-SiC Thin Film on Si Substrate by Chemical Vapor Deposition using Single Precursor of Vinylsilane, D. Takuma, K. Hashimoto, W. Takeuchi, and O. Nakatsuka, Pacific Rim Meeting 2020 Joint The 238th Meeting of The Electrochemical Society (PRiME 2020/238th ECS Meeting), オンライン, 2020年10月07日,  
4
Effects of Phosphorus Doping Concentration in a SiC Thin Film Coated Electrode on Water Electrolysis Electrode, Takashi Koide, Yong Jin, Shigeo Yasuhara, Wakana Takeuchi, 2020 International Conference on Solid State Devices and Materials (SSDM 2020), JP : 日本国, 2020年09月28日,  
5
Effects of High Temperature Annealing on Mg-Doped p-GaN, Hikaru Yoshida, Wakana Takeuchi, Yutaka Tokuda,Takashi Okawa, Hidemoto Tomita, 12th International Symposium on Advanced Plasma Science and its Application for Nitrides and Nanomaterials 13th International Conference on Plasma-Nano Technology & Science (ISPlasma2020), JP : 日本国, 2020年03月10日,  
6
Formation of Low Resistibity SiC Thin Film Using Chemical Vapor Deposition by in situ Phosphorus Doping into Vinylsilane Precursor, Takashi Koide, Yong Jin, Shigeo Yasuhara,Wakana Takeuchi, 12th International Symposium on Advanced Plasma Science and its Application for Nitrides and Nanomaterials 13th International Conference on Plasma-Nano Technology & Science (ISPlasma2020), JP : 日本国, 2020年03月10日,  
7
In-situ Cyclic Metal Layer Oxidation for Further Improving Interface Properties of Al2O3/4H-SiC(0001) Gate Stacks, T. Doi, S. Shibayama, W. Takeuchi, M. Sakashita, N. Taoka, M. Shimizu, O. Nakatsuka, 2019 International Conference on Solid State Devices and Materials (SSDM 2019), JP : 日本国, 2019年09月05日,  
8
Impact of Mechanical Uniaxial Stress on Mobility Enhancement of 4H-SiC (0001) MOSFET, W. Takeuchi, K. Kutsuki, E. Kagoshima, T. Onishi, S. Iwasaki, M. Sakashita, H. Fujiwara, O. Nakatsuka, 2019 International Conference on Solid State Devices and Materials (SSDM 2019), JP : 日本国, 2019年09月05日,  
9
Study of factors to limit increasing Sn content in Ge1-xSnx for MOCVD method, Y. Miki, W. Takeuchi, S. Shibayama, O. Nakatsuka, and S. Zaima, 12th International WorkShop on New Group IV Semiconductor Nanoelectronics, JP : 日本国, 2018年11月06日,  
10
Growth and electronic properties of GeSn-related group-IV alloy semicondcutor thin films, O. Nakatsuka, M. Kurosawa, W. Takeuchi, M. Sakashita, and S. Zaima, 2018 International Conference on Solid State Devices and Materials (SSDM 2018), JP : 日本国, 2018年09月13日,  
11
Impact of Oxygen Radical Treatment on Improvement of Al2O3/SiC Interface, T. Doi, W. Takeuchi, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima, 2018 International Conference on Solid State Devices and Materials (SSDM 2018), JP : 日本国, 2018年09月12日,  
12
Engineering optoelectronic properties of high-Sn-content GeSn, GeSiSn, and SiSn thin films, O. Nakatsuka, M. Kurosawa, M. Fukuda, M. Sakashita, W. Takeuchi, and S. Zaima, IEEE Photonics Society Summer Topical Meeting Series 2018, US : アメリカ合衆国, 2018年07月09日,  
13
Engineering electronic properties of GeSn-related group-IV thin films for nanoelectronic applications, O. Nakatsuka, M. Kurosawa, W. Takeuchi, M. Sakashita, and S. Zaima, European Materials Research Society (2018 E-MRS Spring Meeting), FR : フランス共和国, 2018年06月18日,  
14
Growth of Ge1-xSnx Layer by Metal-organic Chemical Vapor Deposition Method using Tetrakis Dimethylamino Tin, Y. Miki, W. Takeuchi, O. Nakatsuka, and S. Zaima, 10th International Symposium on Advanced Plasma Science and Its Applications for Nitrides Nanomaterials / 11th International Conference on Plasma-Nano Technology and Science (ISPlasma 2018 / IC-PLANTS 2018), JP : 日本国, 2018年03月08日,  
15
Low-Temperature Chemical Vapor Deposition of SiC Thin Film Using Vinylsilane for Metal Surface Coating, T. Doi, W. Takeuchi, Y. Jin, H. Kokubun, S. Yasuhara, O. Nakatsuka, and S. Zaima, 11th International WorkShop on New Group IV Semiconductor Nanoelectronics, JP : 日本国, 2018年02月23日,  
16
Heterostructure Engineering of GeSn and SiGeSn Group-IV Alloy Semiconductor Layers, O. Nakatsuka, M. Kurosawa, W. Takeuchi, M. Sakashita, and S. Zaima, 11th International WorkShop on New Group IV Semiconductor Nanoelectronics, JP : 日本国, 2018年02月23日,  
17
Characterization of Defects in Ge1-xSnx Gate Stack Structure, Y. Kaneda, S. Ike, M. Kanematsu, M. Sakashita, W. Takeuchi, O. Nakatsuka, S. Zaima, 2017 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY (2017 IWDTF), JP : 日本国, 2017年11月20日,  
18
Development of GeSn-Related Group-IV Semiconductor Thin Films for Future Si Nanoelectronic Applications, S. Zaima, O. Nakatsuka, M. Kurosawa, W. Takeuchi, M. Sakashita, the 4th International Symposium on Hybrid Materials and Processing (HyMaP 2017), KR : 大韓民国, 2017年11月05日,  
19
GeSn and related group-IV alloy thin films for future Si nanoelectronics, O. Nakatsuka, M. Kurosawa, W. Takeuchi, M. Sakashita and S. Zaima, The Tenth International Conference on High-Performance Ceramics (CICC-10), CN : 中華人民共和国, 2017年11月04日,  
20
Research and development of GeSn-related thin-film semiconductors for nanoelectronic and optoelectronic applications, O. Nakatsuka, M. Kurosawa, W. Takeuchi, M. Sakashita, S. Zaima, Frontiers in Materials Processing Applications, Research and Technology (FiMPART 2017), FR : フランス共和国, 2017年07月09日,  
21
Development of GeSn and related semiconductor thin films for next generation optoelectronic applications, O. Nakatsuka, M. Kurosawa, W. Takeuchi, M. Sakashita, and S. Zaima, 2017 Global Conference on Polymer and Composite Materials (PCM 2017), CN : 中華人民共和国, 2017年05月23日,  
22
Epitaxial growth of n+-Ge1-xSnxlayerswith in situ phosphorus doping using low-temperature metal-organic chemical vapor deposition method, S. Ike, W. Takeuchi, O. Nakatsuka, and S. Zaima, The 10th International Conference on Silicon Epitaxy and Heterostructures (ICSI-10), GB : グレートブリテンおよび北部アイルランド連合王国(英国), 2017年05月14日,  
23
Selective Growth of Ge1-xSnx Epitaxial Layer on Patterned Si Substrate using Metal-organic Chemical Vapor Deposition Method, T. Washizu, S. Ike, W. Takeuchi, O. Nakatsuka, S. Zaima, 9th International Symposium on Advanced Plasma Science and Its Applications for Nitrides Nanomaterials / 10th International Conference on Plasma-Nano Technology and Science (ISPlasma 2016 / IC-PLANTS 2017), JP : 日本国, 2017年03月01日,  
24
Formation of SiC and SiCN Films by Chemical Vapor Deposition using Vinylsilane, T. Doi, W. Takeuchi, Y. Jin, H. Kokubun, S. Yasuhara, O. Nakatsuka and S. Zaima, 9th International Symposium on Advanced Plasma Science and Its Applications for Nitrides Nanomaterials / 10th International Conference on Plasma-Nano Technology and Science (ISPlasma 2016 / IC-PLANTS 2017), JP : 日本国, 2017年03月01日,  
25
Electrical Properties of AlON/4H-SiC MOS Capacitor Prepared by Plasma-Assisted Atomic Layer Deposition, W. Takeuchi, K. Yamamoto, T. Mimura, M. Sakashita, O. Nakatsuka, and , S. Zaima, 9th International Symposium on Advanced Plasma Science and Its Applications for Nitrides Nanomaterials / 10th International Conference on Plasma-Nano Technology and Science (ISPlasma 2016 / IC-PLANTS 2017), JP : 日本国, 2017年03月01日,  
26
Effect of Oxynitridation Annealing for SiO2/SiC Interface on Defects Properties, W. Takeuchi, K. Yamamoto, M. Sakashita, O. Nakatsuka and S. Zaima, 10th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration", JP : 日本国, 2017年02月13日,  
27
Solid phase crystallization of Ge0.98Sn0.02 layers on various insulating substrates, I. Yoshikawa, M. Kurosawa, W. Takeuchi, M. Sakashita, O. Nakatsuka and S. Zaima, 10th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration", JP : 日本国, 2017年02月13日,  
28
Influence of atomic layer deposition temperature of GeO2 layer on electrical properties of Ge and Ge1-xSnx gate stack, Y. Kaneda, M. Kanematsu, M. Sakashita, W. Takeuchi, O. Nakatsuka and S. Zaima, 10th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration", JP : 日本国, 2017年02月13日,  
29
In situ phosphorus doping of Ge and Ge1-xSnx epitaxial layers by low-temperature metal-organic chemical vapor deposition, S. Ike, W. Takeuchi, O. Nakatsuka and S. Zaima, 10th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration", JP : 日本国, 2017年02月13日,  
30
Characterization of Deep-Level Defects in Ge1-xSnx Epitaxial Layers using Deep Level Transient Spectroscopy, W. Takeuchi, Y. Inuzuka, N. Taoka, M. Sakashita, O. Nakatsuka, and S. Zaima, The 7th International Symposium on Advanced Science and Technology of Silicon Materials (7th JSPS Silicon Symposium), US : アメリカ合衆国, 2016年11月21日,  
31
Analysis of Microscopic Strain and Crystalline Structure in Ge/Ge1-XSnx Fine Structures By Using Synchrotron X-Ray Microdiffraction, S. Ike, O. Nakatsuka, Y. Inuzuka, T. Washizu, W. Takeuchi, Y. Imai, S. Kimura, S. Zaima, Pacific Rim Meeting 2016 Joint The 230th Electrochemical Society Meeting (PRiME 2016/230th ECS Meeting), US : アメリカ合衆国, 2016年10月02日,  
32
Effect of N bonding structure in AlON on leakage current of 4H-SiC MOS capacitor, W. Takeuchi, K. Yamamoto, T. Mimura, M. Sakashita, T. Kanemura, O. Nakatsuka, and S. Zaima, 2016 International Conference on Solid State Devices and Materials (SSDM 2016), JP : 日本国, 2016年09月26日,  
33
Growth of Heavily Doped n-Ge Epitaxial Layer by In situ Phosphorus-doping with Low-temperature Metal-Organic Chemical Vapor Deposition, S. Ike, W. Takeuchi, O. Nakatsuka, and S. Zaima, 2016 International Conference on Solid State Devices and Materials (SSDM 2016), JP : 日本国, 2016年09月26日,  
34
Challenges in Engineering Materials Properties for GeSn Nanoelectronics, S. Zaima, O. Nakatsuka, M. Kurosawa, W. Takeuchi, M. Sakashita, The 2016 European Materials Research Society (E-MRS) Fall Meeting, PL : ポーランド共和国, 2016年09月19日,  
35
Low-Temperature Selective Epitaxial Growth of Ge on Si by using Metal Organic Chemical Vapor Deposition, T. Washizu, S. Ike, Y. Inuzuka, W. Takeuchi, O. Nakatsuka, S. Zaima, The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18), JP : 日本国, 2016年08月07日,  
36
Growth and applications of GeSn-related group-IV semiconductor materials, S. Zaima, O. Nakatsuka, T. Asano, T. Yamaha, S. Ike, A. Suzuki, K. Takahashi, Y. Nagae, M. Kurosawa, W. Takeuchi, Y. Shimura, and M. Sakashita, IEEE 2016 Summer Topicals Meeting Series, US : アメリカ合衆国, 2016年07月11日,  
37
Interfacial Energy Control for Low-Temperature Crystallization of Ge-rich GeSn Layers on Insulating Substrate, I. Yoshikawa, M. Kurosawa, W. Takeuchi, M. Sakashita, O. Nakatsuka, S. Zaima, 7th International Symposium on Control of Semiconductor Interfaces (ISCSI-VII) and International SiGe Technology and Device Meeting (ISTDM 2016), JP : 日本国, 2016年06月07日,  
38
Direct Measurement of Anisotropic Local Strain in Ge Nanostructures Strained with MOCVD-grown Ge1-xSnx by using Microdiffraction, S. Ike, Y. Inuzuka, T. Washizu, W. Takeuchi, Y. Shimura, Y. Imai, O. Nakatsuka, S. Kimura, S. Zaima, 7th International Symposium on Control of Semiconductor Interfaces (ISCSI-VII) and International SiGe Technology and Device Meeting (ISTDM 2016), JP : 日本国, 2016年06月07日,  
39
Development of GeSn thin film technology for electronic and optoelectronic applications, O. Nakatsuka, M. Kurosawa, W. Takeuchi, Y. Shimura, M. Sakashita, and S. Zaima, 2016 Energy Materials Nanotechnology (EMN) Summer Meeting and Photodetectors Meeting, MX : メキシコ合衆国, 2016年06月05日,  
40
Solid phase crystallization of Si1-x-ySnxCy ternary alloy layers and characterization of its crystalline and optical properties, S. Yano, T. Yamaha, Y. Shimura, W. Takeuchi, M. Sakashita, M. Kurosawa, O. Nakatsuka and S. Zaima, 8th International Symposium on Advanced Plasma Science and Its Applications for Nitrides Nanomaterials / 9th International Conference on Plasma-Nano Technology and Science, JP : 日本国, 2016年03月06日,  
41
Formation of poly-Si1-x-ySnxCy ternary alloy layer and characterization of its crystalline and optical properties, S. Yano, T. Yamaha, Y. Shimura, W. Takeuchi, M. Sakashita, M. Kurosawa, O. Nakatsuka and S. Zaima, 9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale, JP : 日本国, 2016年01月11日,  
42
Crystalline and Electrical Properties of in-situ Sb-Doped Ge1-xSnx Epitaxial Layers, J. Jeon, T. Asano, Y. Shimura, W. Takeuchi, M. Kurosawa, M. Sakashita, O. Nakatsuka and S. Zaima, 9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale, JP : 日本国, 2016年01月11日,  
43
Structural and Electrical Properties of Low Temperature CVD-Grown SiGe Epitaxial Layers, S. Ike, E. Simoen, Y. Shimura, A. Hikavyy, W. Vandervorst, R. Loo, W. Takeuchi, O. Nakatsuka and S. Zaima, 9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale, JP : 日本国, 2016年01月11日,  
44
Control of Schottky barrier height at metal/Ge interface by insertion of Ge1-xSnx layer, A. Suzuki, O. Nakatsuka, S. Shibayama, M. Sakashita, W. Takeuchi, M. Kurosawa and S. Zaima, 9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale, JP : 日本国, 2016年01月11日,  
45
Phosphorus doping into Ge with low electrical damage by liquid immersion laser doping, K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, W. Takeuchi, O. Nakatsuka and S. Zaima, 9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale, JP : 日本国, 2016年01月11日,  
46
Control of Schottky Barrier Height at Metal/Ge Interface by SnxGe1-x Interlayer, A. Suzuki, O. Nakatsuka, S. Shibayama, M. Sakashita, W. Takeuchi, M. Kurosawa, and S. Zaima, International Symposium on EcoTopia Science 2015 (ISETS '15), JP : 日本国, 2015年11月27日,  
47
Characterization of electrically active defects in epitaxial GeSn/n-Ge junctions, W. Takeuchi, Y. Inuzuka, T. Asano, M. Sakashita, O. Nakatsuka, and S. Zaima, International Symposium on EcoTopia Science 2015 (ISETS '15), JP : 日本国, 2015年11月27日,  
48
Electrical Characteristics of Ge pn-junction Diodes Prepared by Using Liquid Immersion Laser Doping, K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima, International Symposium on EcoTopia Science 2015 (ISETS '15), JP : 日本国, 2015年11月27日,  
49
Crystal growth and energy band engineering of group-IV semiconductor thin films for nanoelectronic applications, O. Nakatsuka, M. Kurosawa, W. Takeuchi, Y. Shimura, M. Sakashita, and S. Zaima, International Workshop on Advanced Nanomaterials for Future Electron Devices 2015 (IWAN 2015), JP : 日本国, 2015年11月07日,  
50
Influence of Atomic Layer Deposition Temperature of GeO2 Layer on Electrical Properties of Ge Gate Stack, M. Kanematsu, S. Shibayama, M. Sakashita, W. Takeuchi, O. Nakatsuka, S. Zaima, 2015 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES SCIENCE AND TECHNOLOGY (2015 IWDTF), JP : 日本国, 2015年11月02日,  
51
Influence of Atomic Layer Deposition Temperature of GeO2 Layer on Electrical Properties of Ge Gate Stack, M. Kanematsu, S. Shibayama, M. Sakashita, W. Takeuchi, O. Nakatsuka, S. Zaima, 2015 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES - SCIENCE AND TECHNOLOGY - (2015 IWDTF), JP : 日本国, 2015年11月02日,  
52
Challenges of Energy Band Engineering with New Sn-Related Group IV Semiconductor Materials for Future Integrated Circuits, S. Zaima, O. Nakatsuka, T. Yamaha, T. Asano, S. Ike, A. Suzuki, M. Kurosawa, W. Takeuchi, and M. Sakashita, The 228th Electrochemical Society Meeting, US : アメリカ合衆国, 2015年10月11日,  
53
Influence of Precursor Gas on SiGe Epitaxial Material Quality in Terms of Structural and Electrical Defects, S. Ike, E. Simoen, Y. Shimura, A. Hikavyy, W. Vandervorst, R. Loo, W. Takeuchi, O. Nakatsuka and S. Zaima, 2015 International Conference on Solid State Devices and Materials (SSDM 2015), JP : 日本国, 2015年09月27日,  
54
Impact of Ultra-high Sn Content SnxGe1-x Interlayer on Reducing Schottky Barrier Height at Metal/n-Ge Interface, A. Suzuki, O. Nakatsuka, S. Shibayama, M. Sakashita, W. Takeuchi, M. Kurosawa and S. Zaima, 2015 International Conference on Solid State Devices and Materials (SSDM 2015), JP : 日本国, 2015年09月27日,  
55
Effect of Nitridation for SiO2/SiC Interface on Defects Properties near Conduction Band Edge, W. Takeuchi, K. Yamamoto, M. Sakashita, T. Kanemura, O. Nakatsuka and S. Zaima, 2015 International Conference on Solid State Devices and Materials (SSDM 2015), JP : 日本国, 2015年09月27日,  
56
Crystal Growth of GeSn-related Group-IV Thin Films for Integrating on Si Nanoelectronics Platform, S. Zaima, O. Nakatsuka, T. Asano, T. Yamaha, S. Ike, A. Suzuki, M. Kurosawa, W. Takeuchi and M. Sakashita, 2015 International Conference on Solid State Devices and Materials (SSDM 2015), JP : 日本国, 2015年09月27日,  
57
Influence of in-situ Sb-Doping on Crystalline and Electrical Characteristics of n-type Ge1-xSnx Epitaxial Layer, J. Jeon, T. Asano, W. Takeuchi, M. Kurosawa, O. Nakatsuka and S. Zaima, 2015 International Conference on Solid State Devices and Materials (SSDM 2015), JP : 日本国, 2015年09月27日,  
58
Characterization of Deep-level Defects in Epitaxial Ge1-xSnx/Ge structure, W. Takeuchi, T. Asano, Y. Inuzuka, M. Sakashita, O. Nakatsuka and S. Zaima, JSPS International Core-to-Core Program Workshop Atomically Controlled Processing for Ultra-large Scale Integration, FR : フランス共和国, 2015年07月09日,  
59
Reduction of Schottky barrier height with Sn/Ge contact, A. Suzuki, O. Nakatsuka, S. Shibayama, M. Sakashita, W. Takeuchi, M. Kurosawa, S. Zaima, JSPS International Core-to-Core Program Workshop Atomically Controlled Processing for Ultra-large Scale Integration, FR : フランス共和国, 2015年07月09日,  
60
Development of polycrystalline Sn-related group-IV semiconductor thin films - Aiming for 3D-IC, M. Kurosawa, W. Takeuchi, M. Sakashita, O. Nakatsuka, and S. Zaima, 2015 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2015), KR : 大韓民国, 2015年07月01日,  
61
Formation of Ge pn-junction diode by phosphorus doping with liquid immersion laser irradiation, K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, W. Takeuchi, O. Nakatsuka, S. Zaima, 15th International Workshop on Junction Technology 2015 (IWJT 2015), JP : 日本国, 2015年06月11日,  
62
Control of Electrically Active Defects in Ge1-xSnx Epitaxial Layers, T. Asano, S. Shibayama, W. Takeuchi, M. Sakashita, O. Nakatsuka, S. Zaima, The 9th International Conference On Silicon Epitaxy And Heterostructures (ICSI-9), CA : カナダ, 2015年05月17日,  
63
Characterization of Crystallinity of Ge1-xSnx Epitaxial Layers Grown by using Metal-Organic Chemical Vapor Deposition, Y. Inuzuka, S. Ike, T. Asano, W. Takeuchi, O. Nakatsuka, and S. Zaima, The 9th International Conference On Silicon Epitaxy And Heterostructures (ICSI-9), CA : カナダ, 2015年05月17日,  
64
Electrically-Active Defects in Ge1-xSnx Epitaxtial Layer, W. Takeuchi, T. Asano, M. Sakashita, O. Nakatsuka, S. Zaima, 7th International Symposium on Advanced Plasma Science and Its Applications for Nitrides Nanomaterials / 8th International Conference on Plasma-Nano Technology and Science (ISPlasma 2015 / IC-PLANTS 2015), JP : 日本国, 2015年03月27日,  
65
Solid phase epitaxy of Ge1-x-ySnxCy ternary alloy layers, H. Oda, T. Yamaha, M. Kurosawa, W. Takeuchi, M. Sakashita, O. Nakatsuka, S. Zaima, 7th International Symposium on Advanced Plasma Science and Its Applications for Nitrides Nanomaterials / 8th International Conference on Plasma-Nano Technology and Science (ISPlasma 2015 / IC-PLANTS 2015), JP : 日本国, 2015年03月27日,  
66
Epitaxial Growth of Ge1-xSnx Thin Films by using Metal-Organic Chemical Vapor Deposition, Y. Inuzuka, S. Ike, T. Asano, W. Takeuchi, O. Nakatsuka, and S. Zaima, 8th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration", JP : 日本国, 2015年01月29日,  
67
Behaviors of tin related defects in Sb doped n-type germanium, W. Takeuchi, N. Taoka, M. Sakashita, O. Nakatsuka and S. Zaima, 8th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration", JP : 日本国, 2015年01月29日,  
68
Crystalline and Optical Properties of Ge1-x-ySixSny Ternary Alloy Layers for Solar Cell Application, T. Yamaha, S. Asaba, T. Terashima, T. Asano, W. Takeuchi, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima, 8th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration", JP : 日本国, 2015年01月29日,  
69
Growth and Characterization of Si1-x-ySnxCy Ternary Alloy Thin Films for Solar Cell Application, T. Yamaha, H. Oda, M. Kurosawa, W. Takeuchi, O. Nakatsuka, and S. Zaima, The 6th World Conferenceon Photovoltaic Energy Conversion (WCPEC-6), JP : 日本国, 2014年11月23日,  
70
Development of metal/Ge contacts for engineering Schottky barriers, O. Nakatsuka, Y. Deng, A. Suzuki, S. Shibayama, M. Kurosawa, W. Takeuchi, M. Sakashita, N. Taoka, and S. Zaima, JSPS Core-to-Core Program Workshop "Atomically Controlled Processing for Ultralarge Scale Integration", BE : ベルギー王国, 2014年11月13日,  
71
Growth and Characterization of Ternary Alloy Ge1-x-ySnxCy Layers, T. Yamaha, H. Oda, M. Kurosawa, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima, JSPS Core-to-Core Program Workshop "Atomically Controlled Processing for Ultralarge Scale Integration", BE : ベルギー王国, 2014年11月13日,  
72
Hydrogen Surfactant Epitaxy of Ge1-xSnx Layers, T. Asano, N. Taoka, K. Hozaki, W. Takeuchi,M. Sakashita, O. Nakatsuka, and S. Zaima, JSPS Core-to-Core Program Workshop "Atomically Controlled Processing for Ultralarge Scale Integration", BE : ベルギー王国, 2014年11月13日,  
73
Challenges and Developments in GeSn Process Technology for Si Nanoelectronics, S. Zaima, O. Nakatsuka, N. Taoka, K. Kato, W. Takeuchi, and M. Sakashita, 226th Meeting of The Electrochemical Society (ECS) and SMEQ (Sociedad Mexicana de Electroquímica) Joint International Meeting, MX : メキシコ合衆国, 2014年10月05日,  
74
Epitaxial Growth of GeSn Layers on (001), (110), and (111) Si and Ge Substrates, O. Nakatsuka, N. Taoka, T. Asano, T. Yamaha, M. Kurosawa, W. Takeuchi, and S. Zaima, 226th Meeting of The Electrochemical Society (ECS) and SMEQ (Sociedad Mexicana de Electroquímica) Joint International Meeting, MX : メキシコ合衆国, 2014年10月05日,  
75
Formation and Energy Band Engineering of Ternary Alloy Ge1-x-ySnxCy Layers, T. Yamaha, H. Oda, M. Kurosawa, W. Takeuchi, N. Taoka, O. Nakatsuka and S. Zaima, 2014 International Conference on Solid State Devices and Materials (SSDM 2014), JP : 日本国, 2014年09月08日,  
76
Impact of Hydrogen Surfactant Epitaxy and Annealing on Crystallinity of Epitaxial Ge1-xSnx Layers, T. Asano, N. Taoka, K. Hozaki, W. Takeuchi, M. Sakashita, O. Nakatsuka and S. Zaima, 2014 International Conference on Solid State Devices and Materials (SSDM 2014), JP : 日本国, 2014年09月08日,  
77
Transformation of Defects Structure in Germanium by Sn Ion Implantation, W. Takeuchi, N. Taoka, M. Sakashita, O. Nakatsuka, and S. Zaima, International Union of Materials Research Societies - International Conference in Asia 2014 (IUMRS-ICA 2014), JP : 日本国, 2014年08月24日,  
78
Crystalline Growth and Characterization of Group-IV Ternary Alloy Thin Films for Solar Cell, T. Yamaha, K. Terasawa, T. Terashima, W. Takeuchi, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima, 再生可能エネルギー2014 国際会議, JP : 日本国, 2014年07月27日,  
79
Impact of Sn incorporation on low temperature growth of polycrystalline-Si1-xGex layers on insulators, T. Yamaha, T. Ohmura, M. Kurosawa, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima, International SiGe Technology and Device Meeting 2014 (ISTDM 2014), SG : シンガポール共和国, 2014年06月01日,  
80
Epitaxial growth and crystalline properties of Ge1-x-ySixSny Layers on Ge(001) Substrates, T. Asano, T. Terashima, T. Yamaha, M. Kurosawa, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima, International SiGe Technology and Device Meeting 2014 (ISTDM 2014), SG : シンガポール共和国, 2014年06月01日,  
81
Crystal growth of Sn-related group-IV alloy thin films for advanced silicon nanoelectronics, S. Zaima, O. Nakatsuka, N. Taoka, M. Kurosawa, T. Asano, T. Yamaha, and W. Takauchi, International SiGe Technology and Device Meeting 2014 (ISTDM 2014), SG : シンガポール共和国, 2014年06月01日,  
82
Growth and crystalline properties of Ge1-x-ySnxCy ternary alloy thin films on Ge(001) substrate, K. Terasawa, T. Yamaha, M. Kurosawa, W. Takeuchi, N. Taoka, O. Nakatsuka, E. Kamiyama, R. Matsutani, R. Suwa, K. Kashima, K. Izunome, K. Sueoka, and S. Zaima, International SiGe Technology and Device Meeting 2014 (ISTDM 2014), SG : シンガポール共和国, 2014年06月01日,  
83
Formation and Electrical Properties of Metal/Ge1-xSnx Contacts, O. Nakatsuka, T. Nishimura, A. Suzuki, K. Kato, Y. Deng, M. Kurosawa, W. Takeuchi, M. Sakashita, N. Taoka, and S. Zaima, 14th International Workshop on Junction Technology (IWJT 2014), CN : 中華人民共和国, 2014年05月18日,  
84
Sn-assisted low temperature crystallization of polycrystalline Ge1-xSnx thin-films on insulating surfaces, M. Kurosawa, T. Yamaha, W. Takeuchi, N. Taoka, O. Nakatsuka, H. Ikenoue, and S. Zaima, 7th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar, JP : 日本国, 2014年01月27日,  
85
Development of Ge1-xSn and Ge1-x-ySixSny thin film materials for future electronic applications, O. Nakatsuka, N. Taoka, T. Asano, T. Yamaha, M. Kurosawa, K. Kato, W. Takeuchi, M. Sakashita, and S. Zaima, 8th International Conference on Processing & Manufacturing of Advanced Materials (THERMEC' 2013), US : アメリカ合衆国, 2013年12月02日,  
86
Sn-related Group-IV semiconductor materials for electronic and optoelectronic applications, O. Nakatsuka, N. Taoka, T. Asano, T. Yamaha, M. Kurosawa, W. Takeuchi, M. Sakashita, and S. Zaima, 3rd international Conference on Nanotek and Expo (Nanotek-2013), US : アメリカ合衆国, 2013年12月02日,  
87
Interface Properties of Al2O3/Ge MOS Structures with Thin Ge Oxide Interfacial Layer Formed by Pulsed MOCVD, T. Yoshida, K. Kato, S. Shibayama, M. Sakashita, N. Taoka, W. Takeuchi, O. Nakatsuka, S. Zaima, IWDTF 2013, JP : 日本国, 2013年11月07日,  
88
Reduction of Interface States Density due to Post Oxidation with Formation of AlGeO Layer at Al2O3/Ge Interface, S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka and S. Zaima, The 224th Electrochemical Society Meeting, US : アメリカ合衆国, 2013年10月27日,  
89
Stabilization for Higher-k Films with Meta-Stable Crystalline Structure, K. Kato, T. Saito, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima, JSPS Core-to-Core Program Workshop - Atomically Controlled Processing for Ultralarge Scale Integration -, DE : ドイツ連邦共和国, 2013年10月24日,  
90
Interaction between Sn atoms and Defects Introduced by Ion Implantation in Ge Substrate, N. Taoka, M. Fukudome, T. Arahira, W. Takeuchi, M. Sakashita, O. Nakatsuka, and S. Zaima, JSPS Core-to-Core Program Workshop - Atomically Controlled Processing for Ultralarge Scale Integration -, DE : ドイツ連邦共和国, 2013年10月24日,  
91
Interaction of Sn atoms with Defects Introduced by Ion Implantation in Ge Substrate, T. Arahira, M. Fukudome, N. Taoka, W. Takeuchi, M. Sakashita, O. Nakatsuka and S. Zaima, 2013 International Conference on Solid State Devices and Materials (SSDM 2013), JP : 日本国, 2013年09月24日,  
92
Function of Additional Element Incorporation for Tetragonal ZrO2 Formation, K. Kato, T. Saito, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, S. Zaima, NIMS Conference 2013 -Structure Control of Atomic/Molecular Thin Films and Their Applications-, JP : 日本国, 2013年07月01日,  
93
Formation of Tetragonal ZrO2 Thin Film by ALD Method, K. Kato, T. Saito, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, S. Zaima, The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI), JP : 日本国, 2013年06月02日,  
94
Impacts of AlGeO Formation by Post Thermal Oxidation of Al2O3/Ge Structure on Interface Properties, S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, S. Zaima, The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI), JP : 日本国, 2013年06月02日,  
95
Crystalline Phase Control of Pr-Oxide Films by Regulating Oxidant Partial Pressure and Si Diffusion, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, S. Zaima, The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI), JP : 日本国, 2013年06月02日,  
96
Control of Interfacial Reactions in Al2O3/Ge Structures, S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka and S. Zaima, 6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar, JP : 日本国, 2013年02月22日,  
97
Growth and Characterization of Ge1-x-ySixSny Epitaxial Layers for Solar Cell, T. Yamaha, O. Nakatsuka, N. Taoka, W. Takeuchi and S. Zaima, 6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar, JP : 日本国, 2013年02月22日,  
98
Defects introduced in germanium substrate by reactive ion etching, Kusumandari, W. Takeuchi, M. Sakashita, N. Taoka, O. Nakatsuka, S. Zaima, 5rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013), JP : 日本国, 2013年01月28日,  
99
Control of Al2O3/Ge interfacial structures by post oxidation technique using oxygen radical, K. Kato, S. Shibayama, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, S. Zaima, 5rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013), JP : 日本国, 2013年01月28日,  
100
Growth and Characterization of Heteroepitaxial Layers of Ge1-x-ySixSny Ternary Alloy, T. Yamaha, O. Nakatsuka, S. Takeuchi, W. Takeuchi, N. Taoka, K. Araki, K. Izunome and S. Zaima, The Pacific Rim Meeting on Electrochemical and Solid-State Science (PRiME 2012) Joint International 222nd ECS Meeting, US : アメリカ合衆国, 2012年10月07日,  
101
Growth and Optical Properties of Ge1-xSnx Alloy Thin Films with a High Sn Content, S. Zaima, O. Nakatsuka, M. Nakamura, W. Takeuchi, Y. Shimura and N. Taoka, The Pacific Rim Meeting on Electrochemical and Solid-State Science (PRiME 2012) Joint International 222nd ECS Meeting, US : アメリカ合衆国, 2012年10月07日,  
102
Interfacial Reaction Mechanism in Al2O3/Ge Structure by Oxygen Radical, K. Kato, S. Shibayama, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima, 2012 International Conference on Solid State Devices and Materials (SSDM 2012), JP : 日本国, 2012年09月25日,  
103
High Mobility Poly-GeSn Layer Formed by Low Temperature Solid Phase Crystallization, W. Takeuchi, N. Taoka, M. Kurosawa, M. Fukutome, M. Sakashita, O. Nakatsuka, and S. Zaima, 2012 International Conference on Solid State Devices and Materials (SSDM 2012), JP : 日本国, 2012年09月25日,  
104
In situ Sb doping in Ge1-xSnx Epitaxial Layers with High Sn Contents, K. Hozaki, M. Nakamura, Y. Shimura, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima, International Union of Materials Research Societies-International Conference on Electronic Materials 2012 (IUMRS-ICEM 2012), JP : 日本国, 2012年09月23日,  
105
Thermal Oxidation Mechanism of Ge through Al2O3 Layer Formed on Ge Substrate, S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima, International Union of Materials Research Societies-International Conference on Electronic Materials 2012 (IUMRS-ICEM 2012), JP : 日本国, 2012年09月23日,  
106
Importance of Si Bandbending at Zero Bias Condition for Schottky Barrier Height Control at Metal/Si Interfaces with Ultra-thin Al2O3 Layer, H. Matsushita, W. Takeuchi, M. Sakashita, N. Taoka, O. Nakatsuka and S. Zaima, International Union of Materials Research Societies-International Conference on Electronic Materials 2012 (IUMRS-ICEM 2012), JP : 日本国, 2012年09月23日,  
107
Epitaxial Growth and Characterizations of Ge1-xSnx and Ge1-x-ySixSny Thin Layers for Nanoelectronic and Optoelectronic Applications, O. Nakatsuka, N. Taoka, M. Sakashita, W. Takeuchi, S. Zaima, University of Vigo and JSPS Core-to-Core Program Joint Seminar, ES : スペイン, 2012年09月04日,  
108
Potential of GeSn Alloys for Application to Si Nanoelectronics, S. Zaima, Y. Shimura, M. Nakamura, W. Takeuchi, M. Sakashita, and O. Nakatsuka, 2012 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2012), JP : 日本国, 2012年06月27日,  
109
Effects of Light and Air Exposures on Electrical Properties of GeO2/Ge and Al2O3/Ge Gate Stack Structures, Kusumandari, W. Takeuchi, K. Kato, S. Shibayama, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima, 2012 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2012), JP : 日本国, 2012年06月27日,  
110
GeSn Alloy for Nanoelectronic and Optoelectronic Devices, O. Nakatsuka, Y. Shimura, W. Takeuchi, N. Taoka and S. Zaima, CNSE and JSPS Core-to-Core Program Joint Seminar, US : アメリカ合衆国, 2012年06月08日,  
111
Control of Interfacial and Electrical Properties of Metal/Pr-oxide/Ge Gate Stack Structures, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, S. Zaima, CNSE and JSPS Core-to-Core Program Joint Seminar, US : アメリカ合衆国, 2012年06月08日,  
112
Material properties and applications of Ge1-xSnx alloys for Ge Nanoelectronics, O. Nakatsuka, Y. Shimura, W. Takeuchi, and S. Zaima, International SiGe Technology and Device Meeting 2012 (ISTDM 2012), US : アメリカ合衆国, 2012年06月04日,  
113
Optical Properties of Ge1-xSnx Epitaxial Layers with Very High Sn Contents, M. Nakamura, Y. Shimura, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima, International SiGe Technology and Device Meeting 2012 (ISTDM 2012), US : アメリカ合衆国, 2012年06月04日,  
114
Effect of Gate Metal Electrode on Chemical Bonding State in Metal/Pr-oxide/Ge Gate Stack Structure, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima, International SiGe Technology and Device Meeting 2012 (ISTDM 2012), US : アメリカ合衆国, 2012年06月04日,  
115
Effect of N Radical Process on Interfacial and Electrical Properties of Al2O3/Ge Structure, K.Kato, M.Sakashita, W.Takeuchi, O. Nakatsuka, and S.Zaima, The 5th International Conference on Plasma-NanoTechnology & Science (IC-PLANTS 2012), JP : 日本国, 2012年05月09日,  
116
The effect of light exposure on the electrical properties of GeO2/Ge gate stack, Kusumandari, W.Takeuchi, M.Sakashita, O.Nakatsuka, and S.Zaima, 4rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma 2012), JP : 日本国, 2012年05月04日,  
117
Effect of Interfacial Reactions in Radical Process on Electrical Properties of Al2O3/Ge Gate Stack Structure, K. Kato, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima, 15th The International Conference on Thin Films, 2011 (ICTF-15), JP : 日本国, 2011年11月08日,  
118
Suppressive Effect of Interface Reaction and Water Absorption by Al Incorporation into Pr-Oxide Film, W. Takeuchi, K. Furuta, K. Kato, M. Sakashita, H. Kondo, O. Nakatsuka, and S. Zaima, 15th The International Conference on Thin Films, 2011 (ICTF-15), JP : 日本国, 2011年11月08日,  
119
Improvement of Al2O3 Interfacial Properties by O2 Annealing, S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima, 7th International Conference on Si Epitaxy and Heterostructures (iCSi-7 2011&GeSnWorkshop), BE : ベルギー王国, 2011年08月28日,  
120
Control of Surface and Interfacial Structure by Radical Nitridation Technique for Ge MOS Transistors, K. Kato, H. Kondo, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima, The 4th International Conference on PLAsma-NanoTechnology & Science (IC-PLANTS 2011), JP : 日本国, 2011年05月10日,  
121
Characterization of Damages of Al2O3/Ge Gate Stacks Structure Induced with Light Radiation during Plasma Nitridation, Kusumandari, W. Takeuchi, K. Kato, M. Sakashita, O. Nakatsuka, S. Zaima, 3rd International Symposium on Advanced Plasma Science and its Application for Nitrides and Nanomaterials (ISPLasma 2011), JP : 日本国, 2011年05月06日,  
122
Influence of Light Radiation on Electrical Properties of Al2O3/Ge and GeO2/Ge Gate Stacks in Nitrogen Plasma, Kusumandari, W. Takeuchi, K. Kato, M. Sakashita, O. Nakatsuka, S. Zaima, 2011 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology (IWDTF 2011), JP : 日本国, 2011年01月20日,  
123
Control of Interfacial Properties of Al2O3/Ge Gate Stack Structure using Radical Nitridation Technique, K. Kato, S. Kyogoku, M. Sakashita, W. Takeuchi, H. Kondo, O. Nakatsuka, S. Zaima, 2011 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology (IWDTF 2011), JP : 日本国, 2011年01月20日,  
124
Study of Ge Surface Passivation using Radical Nitridation Technique for Ge Channel MOS Transistors, K. Kato, H. Kondo, M. Sakashita, W. Takeuchi, O. Nakatsuka, S. Zaima, The 1st Korea-Japan Symposium on Surface Technology, KR : 大韓民国, 2010年11月25日,  
125
Effect of Valence State of Pr on Interfacial Structure and Electrical Properties of Pr-oxide/PrON/Ge Gate Stack Structure, K. Kato, M. Sakashita, W. Takeuchi, H. Kondo, O. Nakatsuka, and S. Zaima, 2010 International Conference on Solid State Devices and Materials (SSDM 2010), JP : 日本国, 2010年09月22日,  
126
Analysis of Local Leakage Current of Pr Oxide Thin Films with Conductive Atomic Force Microscopy, M. Adachi, M. Sakashita, H. Kondo, W. Takeuchi, O. Nakatsuka, and S. Zaima, 2010 International Conference on Solid State Devices and Materials (SSDM 2010), JP : 日本国, 2010年09月22日,  
127
Effects of Al Incorporation into Pr-oxides Formed by Atomic Layer Deposition, K. Furuta, W. Takeuchi, M. Sakashita, K. Kato, H. Kondo, O. Nakatsuka, and S. Zaima,, 2010 International Conference on Solid State Devices and Materials (SSDM 2010), JP : 日本国, 2010年09月22日,  
128
Crystalline and electrical properties of PrAlO gate insulator films formed by atomic layer deposition, K. Furuta, W. Takeuchi, M. Sakashita, H. Kondo, O. Nakatsuka, and S. Zaima, International Symposium on Technology Evolution for Silicon Nano Electronics (ISTESNE), JP : 日本国, 2010年06月03日,  
129
Electronic Structure of Carbon Nanowalls using Resonant Soft-X-Ray Emission Spectroscopy, W. Takeuchi, M. Hiramatsu, Y. Tokuda, H. Kano, T.Kinoshita, Y. Kato, T. Muro, S. Kimura and M. Hori, 2009 International Conference on Solid State Devices and Materials, JP : 日本国, 2009年10月,  
130
Semiconductor Behavior of Carbon Nanowalls Grown by Plasma-Enhanced Chemical Vapor Deposition, W. Takeuchi, M. Hiramatsu, Y. Tokuda, H. Kano and M. Hori, New Diamond and Nano Carbons Conference 2009, 80 : その他, 2009年06月,  
131
新規カーボンナノ構造体カーボンナノウォールと種々の基板界面の構造解析, 竹内和歌奈, 堀勝, 木村滋, 坂田修身, 田尻寛男, 竹田圭吾, 高島成剛, 重点ナノテクノロジー支援課題研究成果報告会, JP : 日本国, 2009年03月,  
132
Growth of Carbon Nanowalls of High Graphitization Employing PECVD, W. Takeuchi, M. Hiramatsu, H. Kano, Y. Tokuda and M. Hori, 1st International Symposium on Advanced Plasma Science and its Applications (ISPlasma2009), JP : 日本国, 2009年03月,  
133
Control of Structures and Electrical Properties of Carbon Nanowalls Using Plasma Enhanced CVD Employing N2/O2 Addition to C2F6/H2 Gases, W. Takeuchi, M. Hiramatsu, Y. Tokuda, H. Kano, and M. Hori, AVS 55th International Symposium & Exhibition, 80 : その他, 2008年10月,  
134
Control of Structure and Electrical Properties of Carbon Nanowalls: Effect of N2/O2 Addition to Fluorocarbon Plasma CVD with H Radical Injection, W. Takeuchi, M. Hiramatsu, Y. Tokuda, H. Kano and M. Hori, 2008 International Conference on Solid State Device and Materials, 80 : その他, 2008年09月,  
135
カーボンナノウォールの作成とデバイスへの展開, 竹内和歌奈, 加納浩之,, 第6回「次世代半導体材料・デバイス開発のための欠陥エンジニアリングに関する研究会」, JP : 日本国, 2008年09月,  
136
Structural Control of N-doped Carbon Nanowalls using O2 Effect, W. Takeuchi, M. Hiramatsu, Y. Tokuda, H.Kano and M. Hori, 2nd International Conference on New Diamond and Nano Carbons, 80 : その他, 2008年05月,  
137
Control of the structures and the electrical conduction of carbon nanowalls using additional gas,, W. Takeuchi, 先進プラズマナノ科学ワークショップ, JP : 日本国, 2008年05月,  
138
Evaluation and Control of Electric Conduction of Carbon Nanowalls Fabricated by Plasma-Enhanced CVD, W. Takeuchi, M. Ura, Y. Tokuda, M. Hiramatsu, H. Kano and M. Hori, American Vacuum Society 54th International Symposium & Exhibition, 80 : その他, 2007年10月,  

 

受賞
No.受賞年月, 授与機関, 賞名, タイトル 
1
2018年09月13日, 2019 International Conference on Solid State Devices and Materials, Poster Presentation Award, Impact of Oxygen Radical Tretment on Improvement of Al2O3/SiC Interface 
2
2015年06月11日, International Workshop on Junction Technology 2015 (IWJT2015), Best Paper Award, Formation of Ge pn-junction diode by phosphorus doping with liquid immersion laser irradiation 
3
2007年04月, The 5th International Symposium on Advanced Plasma Processes and Diagnostics & the 1st International Symposium on Flexible Electronics Technology, Best Student Oral Presentation Award,  

 

外部資金導入
No.タイトル, 提供機関, 制度名, 研究期間, 代表者 
1
 多層SiC量子ドット形成とその物性評価, 日本学術振興会, 科学研究費助成事業,  2020年04月01日 - 2022年03月31日, 竹内和歌奈 
2
細胞培養電極向けin-situ リンドーピングSiCコートCNW電極開発, 名古屋大学低温プラズマ科学センター, 共同利用・共同研究課題,  2020年04月01日 - 2021年02月, 竹内 和歌奈 
3
細胞培養電極向け低抵抗SiC/カーボンナノウォール多層電極開発, 名古屋大学低温プラズマ科学センター, 共同利用・共同研究課題,  2019年07月01日 - 2020年03月31日, 竹内和歌奈 
4
電気刺激細胞培養基盤向け高生体適合性SiCコート透明電極の開発, 愛知工業大学, 2019年度 愛知工業大学教育・研究特別助成申請書【研究】,  2019年04月 - 2021年03月31日, 竹内和歌奈 
5
SiC-MOSFETの移動度向上に向けた酸素ラジカル処理によるAl2O3系堆積絶縁膜の開発, パワーアカデミー, 2018年度 パワーアカデミー研究助成 「萌芽研究」,  2019年02月01日 - 2020年02月, 竹内 和歌奈 
6
水電解用低温SiCコーティング技術を用いた腐食レス半永久電極の開発, 日東学術振興, 第35回(2018年度)研究助成,  2018年12月 - 2019年12月31日, 竹内和歌奈 
7
有機金属化学気相成長法により成長させたGe1-xSnx膜中の欠陥の挙動の解明と高品質化, 愛知工業大学, 2018年度 愛知工業大学教育・研究特別助成申請書【研究】,  2018年04月 - 2019年03月31日, 竹内和歌奈 
8
GeSn膜の低欠陥密度化及びキャリア密度の制御, 日本学術振興会, 科学研究費助成事業,  2014年04月 - 2017年03月31日, 竹内 和歌奈 
9
省電力/超高速ナノCMOSのための電子物性設計と高移動度チャネル技術の創生, 日本学術振興会, 科学研究費助成事業,  2010年04月 - 2014年03月31日, 財満 鎭明 
10
低次元カーボン系チャネルエンジニアリング, 日本学術振興会, 科学研究費助成事業,  2006年04月 - 2009年03月01日, 堀勝 

 

特許
No.発明の名称, 出願人, 出願番号, 出願日 
1
カーボンナノウォール及びその製造方法, 堀勝、NUエコ・エンジニアリング(株), , 2008年03月26日