Alignment control of self-assembling Si quantum dots, Yuki Imai,Ryoya Tsuji,Katsunori Makihara,Noriyuki Taoka,Akio Ohta,Seiichi Miyazaki, MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 162,   , 2023年08月, https://doi.org/10.1016/j.mssp.2023.107526,  

Layer transfer of ultrathin Ge crystal segregated on Al/Ge(111) structure, Keigo Matsushita,Akio Ohta,Shigehisa Shibayama,Tomoharu Tokunaga,Noriyuki Taoka,Katsunori Makihara,Seiichi Miyazaki, JAPANESE JOURNAL OF APPLIED PHYSICS, 62( SG),  , 2023年06月, https://doi.org/10.35848/1347-4065/acb65c,  

Room Temperature Light Emission from Superatom-like Ge-Core/Si-Shell Quantum Dots, Katsunori Makihara,Yuji Yamamoto,Yuki Imai,Noriyuki Taoka,Markus Andreas Schubert,Bernd Tillack,Seiichi Miyazaki, NANOMATERIALS, 13( 9),  , 2023年04月, https://doi.org/10.3390/nano13091475,  

Formation of ultra-thin NiGe film with single crystalline phase and smooth surface, Shunsuke Nishimura,Noriyuki Taoka,Akio Ohta,Katsunori Makihara,Seiichi Miyazaki, JAPANESE JOURNAL OF APPLIED PHYSICS, 62( SC),  , 2023年04月, https://doi.org/10.35848/1347-4065/acac6f,  

Evaluation of chemical structure and Si segregation of Al/Si(111), Taiki Sakai,Akio Ohta,Keigo Matsushita,Noriyuki Taoka,Katsunori Makihara,Seiichi Miyazaki, JAPANESE JOURNAL OF APPLIED PHYSICS, 62( SC),  , 2023年04月, https://doi.org/10.35848/1347-4065/acb1fd,  

Effects of Cl passivation on Al2O3/GaN interface properties, Taisei Nagai,Noriyuki Taoka,Akio Ohta,Katsunori Makihara,Seiichi Miyazaki, JAPANESE JOURNAL OF APPLIED PHYSICS, 62( SA),  , 2023年01月, https://doi.org/10.35848/1347-4065/ac73d9,  

Study on Electron Emission from Phosphorus ?-Doped Si-QDs/Undoped Si-QDs Multiple-Stacked Structures, Katsunori Makihara,Tatsuya Takemoto,Shuji Obayashi,Akio Ohta,Noriyuki Taoka,Seiichi Miyazaki, IEICE TRANSACTIONS ON ELECTRONICS, E105C( 10), 610- 615, 2022年10月, https://doi.org/10.1587/transele.2021FUP0006,  

Magnetic-Field Dependent Electron Transport of Fe3Si Nanodots, Jialin Wu,Katsunori Makihara,Hai Zhang,Noriyuki Taoka,Akio Ohta,Seiichi Miyazaki, IEICE TRANSACTIONS ON ELECTRONICS, E105C( 10), 616- 621, 2022年10月, https://doi.org/10.1587/transele.2021FUP0007,  

Impact of substrate heating during Al deposition and post annealing on surface morphology, Al crystallinity, and Ge segregation in Al/Ge(111) structure, Keigo Matsushita,Akio Ohta,Noriyuki Taoka,Shohei Hayashi,Katsunori Makihara,Seiichi Miyazaki, JAPANESE JOURNAL OF APPLIED PHYSICS, 61( SH),  , 2022年07月, https://doi.org/10.35848/1347-4065/ac5fbc,  

Characterization of electronic charged states of high density self-aligned Si-based quantum dots evaluated with AFM/Kelvin probe technique, Yuki Imai,Katsunori Makihara,Noriyuki Taoka,Akio Ohta,Seiichi Miyazaki, JAPANESE JOURNAL OF APPLIED PHYSICS, 61( SD),  , 2022年06月, https://doi.org/10.35848/1347-4065/ac61aa,  

SiO2/GaN interfaces with low defect densities and high breakdown electric fields formed by plasma-enhanced atomic layer deposition, Keito Aoshima,Noriyuki Taoka,Masahiro Horita,Jun Suda, JAPANESE JOURNAL OF APPLIED PHYSICS, 61( SC),  , 2022年05月, https://doi.org/10.35848/1347-4065/ac4f79,  

Study on silicidation reaction of Fe nanodots with SiH4, Hiroshi Furuhata,Katsunori Makihara,Yosuke Shimura,Shuntaro Fujimori,Yuki Imai,Akio Ohta,Noriyuki Taoka,Seiichi Miyazaki, APPLIED PHYSICS EXPRESS, 15( 5),  , 2022年05月, https://doi.org/10.35848/1882-0786/ac6727,  

Effect of substrate temperature on plasma-enhanced self-assembling formation of high-density FePt nanodots, Shunsuke Honda,Katsunori Makihara,Noriyuki Taoka,Hiroshi Furuhata,Akio Ohta,Daiki Oshima,Takeshi Kato,Seiichi Miyazaki, JAPANESE JOURNAL OF APPLIED PHYSICS, 61( SA),  , 2022年01月, https://doi.org/10.35848/1347-4065/ac2036,  

Segregation control for ultrathin Ge layer in Al/Ge(111) system, Akio Ohta,Masato Kobayashi,Noriyuki Taoka,Mistuhisa Ikeda,Katsunori Makihara,Seiichi Miyazaki, JAPANESE JOURNAL OF APPLIED PHYSICS, 61( SA),  , 2022年01月, https://doi.org/10.35848/1347-4065/ac19ff,  

Impact of gate electrode formation process on Al2O3/GaN interface properties and channel mobility, Yuto Ando,Manato Deki,Hirotaka Watanabe,Noriyuki Taoka,Atsushi Tanaka,Shugo Nitta,Yoshio Honda,Hisashi Yamada,Mitsuaki Shimizu,Tohru Nakamura,Hiroshi Amano, APPLIED PHYSICS EXPRESS, 14( 8),  , 2021年08月, https://doi.org/10.35848/1882-0786/ac0ffa,  

Surface flattening and Ge crystalline segregation of Ag/Ge structure by thermal anneal, Akio Ohta,Kenzo Yamada,Hibiki Sugawa,Noriyuki Taoka,Mitsuhisa Ikeda,Katsunori Makihara,Seiichi Miyazaki, JAPANESE JOURNAL OF APPLIED PHYSICS, 60( SB),  , 2021年05月, https://doi.org/10.35848/1347-4065/abdad0,  

Energy band diagram for SiO2/Si system as evaluated from UPS analysis under vacuum ultraviolet with variable incident photon energy, Akio Ohta,Takuya Imagawa,Noriyuki Taoka,Mitsuhisa Ikeda,Katsunori Makihara,Seiichi Miyazaki, JAPANESE JOURNAL OF APPLIED PHYSICS, 60( SA),  , 2021年01月, ,  

Electrical properties of GaN metal-insulator-semiconductor field-effect transistors with Al2O3/GaN interfaces formed on vicinal Ga-polar and nonpolar surfaces, Yuto Ando,Kentaro Nagamatsu,Manato Deki,Noriyuki Taoka,Atsushi Tanaka,Shugo Nitta,Yoshio Honda,Tohru Nakamura,Hiroshi Amano, APPLIED PHYSICS LETTERS, 117( 24),  , 2020年12月, https://doi.org/10.1063/5.0028516,  

Low interface state densities at Al2O3/GaN interfaces formed on vicinal polar and non-polar surfaces, Yuto Ando,Kentaro Nagamatsu,Manato Deki,Noriyuki Taoka,Atsushi Tanaka,Shugo Nitta,Yoshio Honda,Tohru Nakamura,Hiroshi Amano, APPLIED PHYSICS LETTERS, 117( 10),  , 2020年09月, https://doi.org/10.1063/5.0010774,  

Impact of byproducts formed on a 4H-SiC surface on interface state density of Al2O3/4H-SiC(0001) gate stacks, Takuma Doi,Shigehisa Shibayama,Wakana Takeuchi,Mitsuo Sakashita,Noriyuki Taoka,Mitsuaki Shimizu,Osamu Nakatsuka, APPLIED PHYSICS LETTERS, 116( 22),  , 2020年06月, https://doi.org/10.1063/1.5143574,  

Formation of ultrathin segregated-Ge crystal on Al/Ge(111) surface, Masato Kobayashi,Akio Ohta,Masashi Kurosawa,Masaaki Araidai,Noriyuki Taoka,Tomohiro Simizu,Mitsuhisa Ikeda,Katsunori Makihara,Seiichi Miyazaki, JAPANESE JOURNAL OF APPLIED PHYSICS, 59,   , 2020年04月, https://doi.org/10.35848/1347-4065/ab69de,  

Comparative study of photoluminescence properties obtained from SiO2/GaN and Al2O3/GaN structures, Noriharu Takada,Noriyuki Taoka,Akio Ohta,Taishi Yamamoto,Nguyen Xuan Truyen,Hisashi Yamada,Tokio Takahashi,Mitsuhisa Ikeda,Katsunori Makihara,Mitsuaki Shimizu,Seiichi Miyazaki, JAPANESE JOURNAL OF APPLIED PHYSICS, 58,   , 2019年08月, https://doi.org/10.7567/1347-4065/ab26ac,  

Impact of remote plasma oxidation of a GaN surface on photoluminescence properties, Noriharu Takada,Noriyuki Taoka,Taishi Yamamoto,Akio Ohta,Nguyen Xuan Truyen,Hisashi Yamada,Tokio Takahashi,Mitsuhisa Ikeda,Katsunori Makihara,Mitsuaki Shimizu,Seiichi Miyazaki, JAPANESE JOURNAL OF APPLIED PHYSICS, 58,   , 2019年06月, https://doi.org/10.7567/1347-4065/ab09c9,  

Effect of carbon in Si oxide interlayers of the Al2O3/4H-SiC structure on interfacial reaction by oxygen radical treatment, Takuma Doi,Wakana Takeuchi,Shigehisa Shibayama,Mitsuo Sakashita,Noriyuki Taoka,Osamu Nakatsuka,Shigeaki Zaima, JAPANESE JOURNAL OF APPLIED PHYSICS, 58,   , 2019年04月, https://doi.org/10.7567/1347-4065/aafb54,  

Impacts of Al2O3/GaN interface properties on the screening effect and carrier mobility in an inversion layer, Noriyuki Taoka,Toshikazu Yamada,Mitsuaki Shimizu, JAPANESE JOURNAL OF APPLIED PHYSICS, 58( SA),  , 2019年02月, https://doi.org/10.7567/1347-4065/aaeb3e,  

Experimental evidence of the existence of multiple charged states at Al2O3/GaN interfaces, Noriyuki Taoka,Toshiharu Kubo,Toshikazu Yamada,Takashi Egawa,Mitsuaki Shimizu, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 34( 2),  , 2019年02月, https://doi.org/10.1088/1361-6641/aaf621,  

Energy band structure and electrical properties of Ga-oxide/GaN interface formed by remote oxygen plasma, Taishi Yamamoto,Noriyuki Taoka,Akio Ohta,Nguyen Xuan Truyen,Hisashi Yamada,Tokio Takahashi,Mitsuhisa Ikeda,Katsunori Makihara,Osamu Nakatsuka,Mitsuaki Shimizu,Seiichi Miyazaki, JAPANESE JOURNAL OF APPLIED PHYSICS, 57( 6),  , 2018年06月, https://doi.org/10.7567/JJAP.57.06KA05,  

Interface properties of SiO2/GaN structures formed by chemical vapor deposition with remote oxygen plasma mixed with Ar or He, Nguyen Xuan Truyen,Noriyuki Taoka,Akio Ohta,Katsunori Makihara,Hisashi Yamada,Tokio Takahashi,Mitsuhisa Ikeda,Mitsuaki Shimizu,Seiichi Miyazaki, JAPANESE JOURNAL OF APPLIED PHYSICS, 57( 6),  , 2018年06月, https://doi.org/10.7567/JJAP.57.06KA01,  

Low-temperature formation of Ga-oxide/GaN interface with remote oxygen plasma and its interface properties, Taishi Yamamoto,Noriyuki Taoka,Akio Ohta,Nguyen Xuan Truyen,Hisashi Yamada,Tokio Takahashi,Mitsuhisa Ikeda,Katsunori Makihara,Mitsuaki Shimizu,Seiichi Miyazaki, JAPANESE JOURNAL OF APPLIED PHYSICS, 57( 6),  , 2018年06月, https://doi.org/10.7567/JJAP.57.06JE01,  

High thermal stability of abrupt SiO2/GaN interface with low interface state density, Nguyen Xuan Truyen,Noriyuki Taoka,Akio Ohta,Katsunori Makihara,Hisashi Yamada,Tokio Takahashi,Mitsuhisa Ikeda,Mitsuaki Shimizu,Seiichi Miyazaki, JAPANESE JOURNAL OF APPLIED PHYSICS, 57( 4),  , 2018年04月, https://doi.org/10.7567/JJAP.57.04FG11,  

Impacts of oxidants in atomic layer deposition method on Al2O3/GaN interface properties, Noriyuki Taoka,Toshiharu Kubo,Toshikazu Yamada,Takashi Egawa,Mitsuaki Shimizu, JAPANESE JOURNAL OF APPLIED PHYSICS, 57( 1),  , 2018年01月, https://doi.org/10.7567/JJAP.57.01AD04,  

Ultrathin silicon oxynitride layer on GaN for dangling-bond-free GaN/insulator interface, Kengo Nishio,Tomoe Yayama,Takehide Miyazaki,Noriyuki Taoka,Mitsuaki Shimizu, SCIENTIFIC REPORTS, 8,   , 2018年01月, https://doi.org/10.1038/s41598-018-19283-4,  

Carrier Conduction in SiO2/GaN Structure with Abrupt Interface, Nguyen Xuan Truyen,Noriyuki Taoka,Akio Ohta,Hisashi Yamada,Tokio Takahashi,Mitsuhisa Ikeda,Katsunori Makihara,Mitsuaki Shimizu,Seiichi Miyazaki, 2018 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA), ,   , 2018年, ,  

Electrical and optical properties improvement of GeSn layers formed at high temperature under well-controlled Sn migration, Noriyuki Taoka,Giovanni Capellini,Viktoria Schlykow,Michele Montanari,Peter Zaumseil,Osamu Nakatsuka,Shigeaki Zaima,Thomas Schroeder, MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 70,  139- 144, 2017年11月, https://doi.org/10.1016/j.mssp.2017.07.013,  

Photoluminescence of phosphorous doped Ge on Si (100), Yuji Yamamoto,Michael Reiner Barget,Giovanni Capellini,Noriyuki Taoka,Michele Virgilio,Peter Zaumseil,Anne Hesse,Thomas Schroeder,Bernd Tillack, MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 70,  111- 116, 2017年11月, https://doi.org/10.1016/j.mssp.2016.09.008,  

Understanding of frequency dispersion in C-V curves of metal-oxide-semiconductor capacitor with wide-bandgap semiconductor, Noriyuki Taoka,Toshiharu Kubo,Toshikazu Yamada,Takashi Egawa,Mitsuaki Shimizu, MICROELECTRONIC ENGINEERING, 178,  182- 185, 2017年06月, https://doi.org/10.1016/j.mee.2017.05.034,  

Electrical and optical properties improvement of GeSn layers formed at high temperature under well-controlled Sn migration, Noriyuki Taoka,Giovanni Capellini,Viktoria Schlykow,Michele Montanari,Peter Zaumseil,Osamu Nakatsuka,Shigeaki Zaima,Thomas Schroeder, MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 57,  48- 53, 2017年01月, https://doi.org/10.1016/j.mssp.2016.09.040,  

Influence of interface traps inside the conduction band on the capacitance-voltage characteristics of InGaAs metal-oxide-semiconductor capacitors, Noriyuki Taoka,Masafumi Yokoyama,Sang Hyeon Kim,Rena Suzuki,Ryo Iida,Mitsuru Takenaka,Shinichi Takagi, APPLIED PHYSICS EXPRESS, 9( 11),  , 2016年11月, https://doi.org/10.7567/APEX.9.111202,  

Impact of surface orientation on (100), (111)A, and (111)B InGaAs surfaces with In content of 0.53 and 0.70 and on their Al2O3/InGaAs metal-oxide-semiconductor interface properties, Masafumi Yokoyama,Rena Suzuki,Noriyuki Taoka,Mitsuru Takenaka,Shinichi Takagi, APPLIED PHYSICS LETTERS, 109( 18),  , 2016年10月, https://doi.org/10.1063/1.4966284,  

Effects of nitridation for SiO2/SiC interface on defect properties near the conduction band edge, Wakana Takeuchi,Kensaku Yamamoto,Noriyuki Taoka,Mitsuo Sakashita,Takashi Kanemura,Osamu Nakatsuka,Shigeaki Zaima, JAPANESE JOURNAL OF APPLIED PHYSICS, 55( 4),  , 2016年04月, https://doi.org/10.7567/JJAP.55.04ER13,  

Sn migration control at high temperature due to high deposition speed for forming high-quality GeSn layer, Noriyuki Taoka,Giovanni Capellini,Nils von den Driesch,Dan Buca,Peter Zaumseil,Markus Andreas Schubert,Wolfgang Matthias Klesse,Michele Montanari,Thomas Schroeder, APPLIED PHYSICS EXPRESS, 9( 3),  , 2016年03月, https://doi.org/10.7567/APEX.9.031201,  

Effects of additional oxidation after Ge condensation on electrical properties of germanium-on-insulator p-channel MOSFETs, Junkyo Suh,Ryosho Nakane,Noriyuki Taoka,Mitsuru Takenaka,Shinichi Takagi, SOLID-STATE ELECTRONICS, 117,  77- 87, 2016年03月, https://doi.org/10.1016/j.sse.2015.11.014,  

Low temperature formation of higher- k cubic phase HfO2 by atomic layer deposition on GeOx/Ge structures fabricated by in-situ thermal oxidation, R. Zhang,P. C. Huang,N. Taoka,M. Yokoyama,M. Takenaka,S. Takagi, Applied Physics Letters, 108( 5),  , 2016年02月01日, https://doi.org/10.1063/1.4941538,  

Defect and dislocation structures in low-temperature-grown Ge and Ge-1 (-) xSn(x) epitaxial layers on Si(110) substrates, Shohei Kidowaki,Takanori Asano,Yosuke Shimura,Masashi Kurosawa,Noriyuki Taoka,Osamu Nakatsuka,Shigeaki Zaima, THIN SOLID FILMS, 598,  72- 81, 2016年01月, https://doi.org/10.1016/j.tsf.2015.11.048,  

Oxygen and germanium migration at low temperature influenced by the thermodynamic nature of the materials used in germanium metal-insulator-semiconductor structures, Kimihiko Kato,Noriyuki Taoka,Mitsuo Sakashita,Osamu Nakatsuka,Shigeaki Zaima, APPLIED PHYSICS LETTERS, 107( 10),  , 2015年09月, https://doi.org/10.1063/1.4930227,  

Effect of Sn on crystallinity and electronic property of low temperature grown polycrystalline-Si1-x-yGexSny layers on SiO2, Takashi Yamaha,Masashi Kurosawa,Takuma Ohmura,Wakana Takeuchi,Noriyuki Taoka,Osamu Nakatsuka,Shigeaki Zaima, SOLID-STATE ELECTRONICS, 110,  54- 58, 2015年08月, https://doi.org/10.1016/j.sse.2015.01.005,  

Epitaxial growth and crystalline properties of Ge1-x-ySixSny on Ge(001) substrates, Takanori Asano,Tatsuya Terashima,Takashi Yamaha,Masashi Kurosawa,Wakana Takeuchi,Noriyuki Taoka,Osamu Nakatsuka,Shigeaki Zaima, SOLID-STATE ELECTRONICS, 110,  49- 53, 2015年08月, https://doi.org/10.1016/j.sse.2015.01.006,  

Growth and applications of GeSn-related group-IV semiconductor materials, Shigeaki Zaima,Osamu Nakatsuka,Noriyuki Taoka,Masashi Kurosawa,Wakana Takeuchi,Mitsuo Sakashita, SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS, 16( 4),  , 2015年08月, https://doi.org/10.1088/1468-6996/16/4/043502,  

High hole mobility tin-doped polycrystalline germanium layers formed on insulating substrates by low-temperature solid-phase crystallization, Wakana Takeuchi,Noriyuki Taoka,Masashi Kurosawa,Mitsuo Sakashita,Osamu Nakatsuka,Shigeaki Zaima, APPLIED PHYSICS LETTERS, 107( 2),  , 2015年07月, https://doi.org/10.1063/1.4926507,  

Characterization of locally strained Ge1-xSnx/Ge fine structures by synchrotron X-ray microdiffraction, Shinichi Ike,Osamu Nakatsuka,Yoshihiko Moriyama,Masashi Kurosawa,Noriyuki Taoka,Yasuhiko Imai,Shigeru Kimura,Tsutomu Tezuka,Shigeaki Zaima, APPLIED PHYSICS LETTERS, 106( 18),  , 2015年05月, https://doi.org/10.1063/1.4921010,  

Impact of hydrogen surfactant on crystallinity of Ge1-xSnx epitaxial layers (vol 54, 04DH15, 2015), Takanori Asano,Noriyuki Taoka,Koya Hozaki,Wakana Takeuchi,Mitsuo Sakashita,Osamu Nakatsuka,Shigeaki Zaima, JAPANESE JOURNAL OF APPLIED PHYSICS, 54( 5),  , 2015年05月, https://doi.org/10.7567/JJAP.54.059202,  

Near-infrared light absorption by polycrystalline SiSn alloys grown on insulating layers, Masashi Kurosawa,Motohiro Kato,Takashi Yamaha,Noriyuki Taoka,Osamu Nakatsuka,Shigeaki Zaima, APPLIED PHYSICS LETTERS, 106( 17),  , 2015年04月, https://doi.org/10.1063/1.4919451,  

Impact of hydrogen surfactant on crystallinity of Ge1-xSnx epitaxial layers, Takanori Asano,Noriyuki Taoka,Koya Hozaki,Wakana Takeuchi,Mitsuo Sakashita,Osamu Nakatsuka,Shigeaki Zaima, JAPANESE JOURNAL OF APPLIED PHYSICS, 54( 4),  , 2015年04月, https://doi.org/10.7567/JJAP.54.04DH15,  

Formation, crystalline structure, and optical properties of Ge1-x-ySnxCy ternary alloy layers, Takashi Yamaha,Kengo Terasawa,Hiroki Oda,Masashi Kurosawa,Wakana Takeuchi,Noriyuki Taoka,Osamu Nakatsuka,Shigeaki Zaima, JAPANESE JOURNAL OF APPLIED PHYSICS, 54( 4),  , 2015年04月, https://doi.org/10.7567/JJAP.54.04DH08,  

Non-uniform depth distributions of Sn concentration induced by Sn migration and desorption during GeSnSi layer formation, Noriyuki Taoka,Takanori Asano,Takashi Yamaha,Tatsuya Terashima,Osamu Nakatsuka,Ioan Costina,Peter Zaumseil,Giovanni Capellini,Shigeaki Zaima,Thomas Schroeder, APPLIED PHYSICS LETTERS, 106( 6),  , 2015年02月, https://doi.org/10.1063/1.4908121,  

Formation of chemically stable GeO2 on the Ge surface with pulsed metal-organic chemical vapor deposition, Shigehisa Shibayama,Teppei Yoshida,Kimihiko Kato,Mitsuo Sakashita,Wakana Takeuchi,Noriyuki Taoka,Osamu Nakatsuka,Shigeaki Zaima, APPLIED PHYSICS LETTERS, 106( 6),  , 2015年02月, https://doi.org/10.1063/1.4908066,  

Epitaxial Ge1-xSnx Layers Grown by Metal-Organic Chemical Vapor Deposition Using Tertiary-butyl-germane and Tri-butyl-vinyl-tin, Yuki Inuzuka,Shinichi Ike,Takanori Asano,Wakana Takeuchi,Noriyuki Taoka,Osamu Nakatsuka,Shigeaki Zaima, ECS SOLID STATE LETTERS, 4( 8), P59- P61, 2015年, https://doi.org/10.1149/2.0041508ssl,  

Formation of high-quality oxide/Ge1-xSnx interface with high surface Sn content by controlling Sn migration, Kimihiko Kato,Noriyuki Taoka,Takanori Asano,Teppei Yoshida,Mitsuo Sakashita,Osamu Nakatsuka,Shigeaki Zaima, APPLIED PHYSICS LETTERS, 105( 12),  , 2014年09月, https://doi.org/10.1063/1.4896146,  

Robustness of Sn precipitation during thermal oxidation of Gei(1-x)Sn(x) on Ge(001), Kimihiko Kato,Takanori Asano,Noriyuki Taoka,Mitsuo Sakashita,Wakana Takeuchi,Osamu Nakatsuka,Shigeaki Zaima, JAPANESE JOURNAL OF APPLIED PHYSICS, 53( 8), 72- 79, 2014年08月, https://doi.org/10.7567/JJAP.53.08LD04,  

Importance of Ge surface oxidation with high oxidation rate in obtaining low interface state density at oxide/Ge interfaces, Shigehisa Shibayama,Kimihiko Kato,Mitsuo Sakashita,Wakana Takeuchi,Noriyuki Taoka,Osamu Nakatsuka,Shigeaki Zaima, JAPANESE JOURNAL OF APPLIED PHYSICS, 53( 8), 60- 65, 2014年08月, https://doi.org/10.7567/JJAP.53.08LD02,  

Interface properties of Al2O3/Ge structures with thin Ge oxide interfacial layer formed by pulsed metal organic chemical vapor deposition, Teppei Yoshida,Kimihiko Kato,Shigehisa Shibayama,Mitsuo Sakashita,Noriyuki Taoka,Wakana Takeuchi,Osamu Nakatsuka,Shigeaki Zaima, JAPANESE JOURNAL OF APPLIED PHYSICS, 53( 8), 66- 71, 2014年08月, https://doi.org/10.7567/JJAP.53.08LD03,  

Formation of high-quality Ge1-xSnx layer on Ge(110) substrate with strain-induced confinement of stacking faults at Ge1-xSnx/Ge interfaces, Takanori Asano,Noriyuki Taoka,Osamu Nakatsuka,Shigeaki Zaima, APPLIED PHYSICS EXPRESS, 7( 6),  , 2014年06月, https://doi.org/10.7567/APEX.7.061301,  

Interaction of Sn atoms with defects introduced by ion implantation in Ge substrate, Noriyuki Taoka,Motoshi Fukudome,Wakana Takeuchi,Takamitsu Arahira,Mitsuo Sakashita,Osamu Nakatsuka,Shigeaki Zaima, JOURNAL OF APPLIED PHYSICS, 115( 17),  , 2014年05月, https://doi.org/10.1063/1.4874800,  

Effect of thermal cleaning on formation of epitaxial Ni germanide layer on Ge(110) substrate, Yunsheng Deng,Osamu Nakatsuka,Noriyuki Taoka,Shigeaki Zaima, JAPANESE JOURNAL OF APPLIED PHYSICS, 53( 5),  , 2014年05月, https://doi.org/10.7567/JJAP.53.05GA06,  

Formation and crystalline structure of Ni silicides on Si(110) substrate, Osamu Nakatsuka,Masahiro Hasegawa,Kimihiko Kato,Noriyuki Taoka,Shigeaki Zaima, JAPANESE JOURNAL OF APPLIED PHYSICS, 53( 5),  , 2014年05月, https://doi.org/10.7567/JJAP.53.05GA12,  

Observation of lattice spacing fluctuation and strain undulation around through-Si vias in wafer-on-wafer structures using X-ray microbeam diffraction, Noriyuki Taoka,Osamu Nakatsuka,Yoriko Mizushima,Hideki Kitada,Young Suk Kim,Tomoji Nakamura,Takayuki Ohba,Shigeaki Zaima, JAPANESE JOURNAL OF APPLIED PHYSICS, 53( 5),  , 2014年05月, https://doi.org/10.7567/JJAP.53.05GE03,  

Impacts of AlGeO formation by post thermal oxidation of Al2O3/Ge structure on interfacial properties, Shigehisa Shibayama,Kimihiko Kato,Mitsuo Sakashita,Wakana Takeuchi,Noriyuki Taoka,Osamu Nakatsuka,Shigeaki Zaima, THIN SOLID FILMS, 557,  282- 287, 2014年04月, https://doi.org/10.1016/j.tsf.2013.10.084,  

Reduction of Schottky barrier height for n-type Ge contact by using Sn electrode, Akihiro Suzuki,Shunsuke Asaba,Jun Yokoi,Kimihiko Kato,Masashi Kurosawa,Mitsuo Sakashita,Noriyuki Taoka,Osamu Nakatsuka,Shigeaki Zaima, JAPANESE JOURNAL OF APPLIED PHYSICS, 53( 4),  , 2014年04月, https://doi.org/10.7567/JJAP.53.04EA06,  

Characterization of crystalline structures of SiGe substrate formed by traveling liquidus-zone method for devices with Ge/SiGe structures, Takashi Yamaha,Osamu Nakatsuka,Noriyuki Taoka,Kyoichi Kinoshita,Shinichi Yoda,Shigeaki Zaima, THIN SOLID FILMS, 557,  129- 134, 2014年04月, https://doi.org/10.1016/j.tsf.2013.10.097,  

Influence of Ge substrate orientation on crystalline structures of Ge-1 (-) Sn-x(x) epitaxial layers, Takanori Asano,Shohei Kidowaki,Masashi Kurosawa,Noriyuki Taoka,Osamu Nakatsuka,Shigeaki Zaima, THIN SOLID FILMS, 557,  159- 163, 2014年04月, https://doi.org/10.1016/j.tsf.2013.10.087,  

Epitaxial formation and electrical properties of Ni germanide/Ge(110) contacts, Yunsheng Deng,Osamu Nakatsuka,Jun Yokoi,Noriyuki Taoka,Shigeaki Zaima, THIN SOLID FILMS, 557,  84- 89, 2014年04月, https://doi.org/10.1016/j.tsf.2013.10.017,  

Formation and characterization of locally strained Ge-1 (-) Sn-x(x)/Ge microstructures, Shinichi Ike,Yoshihiko Moriyama,Masashi Kurosawa,Noriyuki Taoka,Osamu Nakatsuka,Yasuhiko Imai,Shigeru Kimura,Tsutomu Tezuka,Shigeaki Zaima, THIN SOLID FILMS, 557,  164- 168, 2014年04月, https://doi.org/10.1016/j.tsf.2013.08.126,  

Analysis for positions of Sn atoms in epitaxial Ge-1 (-) Sn-x(x) film in low temperature depositions, Eiji Kamiyama,Koji Sueoka,Osamu Nakatsuka,Noriyuki Taoka,Shigeaki Zaima,Koji Izunome,Kazuhiko Kashima, THIN SOLID FILMS, 557,  173- 176, 2014年04月, https://doi.org/10.1016/j.tsf.2013.10.070,  

Stabilized formation of tetragonal ZrO2 thin film with high permittivity, Kimihiko Kato,Takatoshi Saito,Shigehisa Shibayama,Mitsuo Sakashita,Wakana Takeuchi,Noriyuki Taoka,Osamu Nakatsuka,Shigeaki Zaima, THIN SOLID FILMS, 557,  192- 196, 2014年04月, https://doi.org/10.1016/j.tsf.2014.01.031,  

Importance of control of oxidant partial pressure on structural and electrical properties of Pr-oxide films, Kimihiko Kato,Mitsuo Sakashita,Wakana Takeuchi,Noriyuki Taoka,Osamu Nakatsuka,Shigeaki Zaima, THIN SOLID FILMS, 557,  276- 281, 2014年04月, https://doi.org/10.1016/j.tsf.2013.10.088,  

Large grain growth of Ge-rich Ge1-xSnx (x approximate to 0.02) on insulating surfaces using pulsed laser annealing in flowing water, Masashi Kurosawa,Noriyuki Taoka,Hiroshi Ikenoue,Osamu Nakatsuka,Shigeaki Zaima, APPLIED PHYSICS LETTERS, 104( 6),  , 2014年02月, https://doi.org/10.1063/1.4864627,  

Effect of Sn atoms on incorporation of vacancies in epitaxial Ge1-xSnx film grown at low temperature, Eiji Kamiyama,Satoko Nakagawa,Koji Sueoka,Takuma Ohmura,Takanori Asano,Osamu Nakatsuka,Noriyuki Taoka,Shigeaki Zaima,Koji Izunome,Kazuhiko Kashima, APPLIED PHYSICS EXPRESS, 7( 2),  , 2014年02月, https://doi.org/10.7567/APEX.7.021302,  

Formation and Electrical Properties of Metal/Ge1-xSnx Contacts, Osamu Nakatsuka,Tsuyoshi Nishimura,Akihiro Suzuki,Kimihiko Kato,Deng Yunsheng,Masashi Kurosawa,Wakana Takeuchi,Mitsuo Sakashita,Noriyuki Taoka,Shigeaki Zaima, 2014 INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY (IWJT), ,  96- 99, 2014年, ,  

Impact of Crystalline Structure on Electrical Property of NiGe/Ge Contact, Yunsheng Deng,Osamu Nakatsuka,Noriyuki Taoka,Shigeaki Zaima, 2014 7TH INTERNATIONAL SILICON-GERMANIUM TECHNOLOGY AND DEVICE MEETING (ISTDM), ,  85- 86, 2014年, ,  

Low temperature growth of SiSn polycrystals with high Sn contents on insulating layers, Masashi Kurosawa,Motohiro Kato,Takashi Yamaha,Noriyuki Taoka,Osamu Nakatsuka,Shigeaki Zaima, 2014 7TH INTERNATIONAL SILICON-GERMANIUM TECHNOLOGY AND DEVICE MEETING (ISTDM), ,  83- 84, 2014年, ,  

Epitaxial growth of GeSn layers on (001), (110), and (111) Si and Ge substrates, Osamu Nakatsuka,Noriyuki Taoka,Takanori Asano,Takashi Yamaha,Masashi Kurosawa,Wakana Takeuchi,Shigeaki Zaima, SIGE, GE, AND RELATED COMPOUNDS 6: MATERIALS, PROCESSING, AND DEVICES, 64( 6), 793- 799, 2014年, https://doi.org/10.1149/06406.0793ecst,  

Impact of Sn Incorporation on Low Temperature Growth of Polycrystalline Si1-xGex Layers on Insulators, Takashi Yamaha,Takuma Ohmura,Masashi Kurosawa,Wakana Takeuchi,Noriyuki Taoka,Osamu Nakatsuka,Shigeaki Zaima, 2014 7TH INTERNATIONAL SILICON-GERMANIUM TECHNOLOGY AND DEVICE MEETING (ISTDM), ,  169- 170, 2014年, ,  

Crystal Growth of Sn-related Group-IV Alloy Thin Films for Advanced Si Nanoelectronics, Shigeaki Zaima,Osamu Nakatsuka,Noriyuki Taoka,Masashi Kurosawa,Takanori Asano,Takashi Yamaha,Wakana Takeuchi, 2014 7TH INTERNATIONAL SILICON-GERMANIUM TECHNOLOGY AND DEVICE MEETING (ISTDM), ,  155- 156, 2014年, ,  

Challenges and developments in GeSn process technology for Si nanoelectronics, Shigeaki Zaima,Osamu Nakatsuka,Noriyuki Taoka,Kimihiko Kato,Wakana Takeuchi,Mitsuo Sakashita, SIGE, GE, AND RELATED COMPOUNDS 6: MATERIALS, PROCESSING, AND DEVICES, 64( 6), 147- 153, 2014年, https://doi.org/10.1149/06406.0147ecst,  

Impact of Fermi Level Pinning Due to Interface Traps Inside the Conduction Band on the Inversion-Layer Mobility in InxGa1-xAs Metal-Oxide-Semiconductor Field Effect Transistors, Noriyuki Taoka,Masafumi Yokoyama,Sang Hyeon Kim,Rena Suzuki,Sunghoon Lee,Ryo Iida,Takuya Hoshii,Wipakorn Jevasuwan,Tatsuro Maeda,Tetsuji Yasuda,Osamu Ichikawa,Noboru Fukuhara,Masahiko Hata,Mitsuru Takenaka,Shinichi Takagi, IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 13( 4), 456- 462, 2013年12月, https://doi.org/10.1109/TDMR.2013.2289330,  

High mobility CMOS technologies using III-V/Ge channels on Si platform, S. Takagi,S. -H. Kim,M. Yokoyama,R. Zhang,N. Taoka,Y. Urabe,T. Yasuda,H. Yamada,O. Ichikawa,N. Fukuhara,M. Hata,M. Takenaka, SOLID-STATE ELECTRONICS, 88,  2- 8, 2013年10月, https://doi.org/10.1016/j.sse.2013.04.020,  

Liquid-Sn-driven lateral growth of poly-GeSn on insulator assisted by surface oxide layer, Masashi Kurosawa,Noriyuki Taoka,Mitsuo Sakashita,Osamu Nakatsuka,Masanobu Miyao,Shigeaki Zaima, APPLIED PHYSICS LETTERS, 103( 10),  , 2013年09月, https://doi.org/10.1063/1.4820405,  

Impact of Fermi level pinning inside conduction band on electron mobility in InGaAs metal-oxide-semiconductor field-effect transistors, Noriyuki Taoka,Masafumi Yokoyama,Sang Hyeon Kim,Rena Suzuki,Sunghoon Lee,Ryo Iida,Takuya Hoshii,Wipakorn Jevasuwan,Tatsuro Maeda,Tetsuji Yasuda,Osamu Ichikawa,Noboru Fukuhara,Masahiko Hata,Mitsuru Takenaka,Shinichi Takagi, APPLIED PHYSICS LETTERS, 103( 14),  , 2013年09月, https://doi.org/10.1063/1.4824474,  

Sub-60-nm Extremely Thin Body InxGa1-xAs-On-Insulator MOSFETs on Si With Ni-InGaAs Metal S/D and MOS Interface Buffer Engineering and Its Scalability, Sanghyeon Kim,Masafumi Yokoyama,Noriyuki Taoka,Ryosho Nakane,Tetsuji Yasuda,Osamu Ichikawa,Noboru Fukuhara,Masahiko Hata,Mitsuru Takenaka,Shinichi Takagi, IEEE TRANSACTIONS ON ELECTRON DEVICES, 60( 8), 2512- 2517, 2013年08月, https://doi.org/10.1109/TED.2013.2270558,  

Understanding of interface structures and reaction mechanisms induced by Ge or GeO diffusion in Al2O3/Ge structure, Shigehisa Shibayama,Kimihiko Kato,Mitsuo Sakashita,Wakana Takeuchi,Noriyuki Taoka,Osamu Nakatsuka,Shigeaki Zaima, APPLIED PHYSICS LETTERS, 103( 8),  , 2013年08月, https://doi.org/10.1063/1.4819127,  

Ge-rich SiGe-on-insulator for waveguide optical modulator application fabricated by Ge condensation and SiGe regrowth, Younghyun Kim,Masafumi Yokoyama,Noriyuki Taoka,Mitsuru Takenaka,Shinichi Takagi, OPTICS EXPRESS, 21( 17), 19615- 19623, 2013年08月, https://doi.org/10.1364/OE.21.019615,  

Experimental Study on Electron Mobility in InxGa1-xAs-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors With In Content Modulation and MOS Interface Buffer Engineering, SangHyeon Kim,Masafumi Yokoyama,Noriyuki Taoka,Ryo Iida,Sung-Hoon Lee,Ryosho Nakane,Yuji Urabe,Noriyuki Miyata,Tetsuji Yasuda,Hisashi Yamada,Noboru Fukuhara,Masahiko Hata,Mitsuru Takenaka,Shinichi Takagi, IEEE TRANSACTIONS ON NANOTECHNOLOGY, 12( 4), 621- 628, 2013年07月, https://doi.org/10.1109/TNANO.2013.2265435,  

Effect of gate metal on chemical bonding state in metal/Pr-oxide/Ge gate stack structure, Kimihiko Kato,Mitsuo Sakashita,Wakana Takeuchi,Noriyuki Taoka,Osamu Nakatsuka,Shigeaki Zaima, SOLID-STATE ELECTRONICS, 83,  56- 60, 2013年05月, https://doi.org/10.1016/j.sse.2013.01.029,  

Epitaxial growth and anisotropic strain relaxation of Ge1-xSnx layers on Ge(110) substrates, Takanori Asano,Yosuke Shimura,Noriyuki Taoka,Osamu Nakatsuka,Shigeaki Zaima, SOLID-STATE ELECTRONICS, 83,  71- 75, 2013年05月, https://doi.org/10.1016/j.sse.2013.01.039,  

Development of epitaxial growth technology for Ge1-xSnx alloy and study of its properties for Ge nanoelectronics, Osamu Nakatsuka,Yosuke Shimura,Wakana Takeuchi,Noriyuki Taoka,Shigeaki Zaima, SOLID-STATE ELECTRONICS, 83,  82- 86, 2013年05月, https://doi.org/10.1016/j.sse.2013.01.040,  

Interfacial Reaction Mechanisms in Al2O3/Ge Structure by Oxygen Radical Process, Kimihiko Kato,Shigehisa Shibayama,Mitsuo Sakashita,Wakana Takeuchi,Noriyuki Taoka,Osamu Nakatsuka,Shigeaki Zaima, JAPANESE JOURNAL OF APPLIED PHYSICS, 52( 4),  , 2013年04月, https://doi.org/10.7567/JJAP.52.04CA08,  

Impacts of Surface Roughness Reduction in (110) Si Substrates Fabricated by High-Temperature Annealing on Electron Mobility in n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors on (110) Si, Sung-Ho Jeon,Noriyuki Taoka,Hiroaki Matsumoto,Kiyotaka Nakano,Susumu Koyama,Hiroshi Kakibayasi,Koji Araki,Moriya Miyashita,Koji Izunome,Mitsuru Takenaka,Shinichi Takagi, JAPANESE JOURNAL OF APPLIED PHYSICS, 52( 4),  , 2013年04月, https://doi.org/10.7567/JJAP.52.04CC26,  

High-Mobility Ge p- and n-MOSFETs With 0.7-nm EOT Using HfO2/Al2O3/GeOx/Ge Gate Stacks Fabricated by Plasma Postoxidation, Rui Zhang,Po-Chin Huang,Ju-Chin Lin,Noriyuki Taoka,Mitsuru Takenaka,Shinichi Takagi, IEEE TRANSACTIONS ON ELECTRON DEVICES, 60( 3), 927- 934, 2013年03月, https://doi.org/10.1109/TED.2013.2238942,  

Effects of Light Exposure during Plasma Processing on Electrical Properties of GeO2/Ge Structures, Kusumandari,Wakana Takeuchi,Kimihiko Kato,Shigehisa Shibayama,Mitsuo Sakashita,Noriyuki Taoka,Osamu Nakatsuka,Shigeaki Zaima, JAPANESE JOURNAL OF APPLIED PHYSICS, 52( 1),  , 2013年01月, https://doi.org/10.7567/JJAP.52.01AC04,  

III-V/Ge CMOS device technologies for high performance logic applications, S. Takagi,M. Yokoyama,S. H. Kim,R. Zhang,R. Suzuki,N. Taoka,M. Takenaka, ECS Transactions, 53( 3), 85- 96, 2013年, https://doi.org/10.1149/05303.0085ecst,  

Doppler Broadening Spectroscopy of Positron Annihilation near Ge and Si (001) Single Crystal Surfaces, Eiji Kamiyama,Koji Sueoka,Koji Izunome,Kazuhiko Kashima,Osamu Nakatsuka,Noriyuki Taoka,Shigeaki Zaima,Jan Vanhellemont, ECS SOLID STATE LETTERS, 2( 10), P89- P90, 2013年, https://doi.org/10.1149/2.004310ssl,  

Heteroepitaxial Growth of Sn-related Group-IV Materials on Si Platform for Microelectronic and Optoelectronic Applications: Challenges and Opportunities, Osamu Nakatsuka,Noriyuki Taoka,Takanori Asano,Takashi Yamaha,Masashi Kurosawa,Mitsuo Sakashita,Shigeaki Zaima, ULSI PROCESS INTEGRATION 8, 58( 9), 149- 155, 2013年, https://doi.org/10.1149/05809.0149ecst,  

Sulfur cleaning for (100) (111)A and (111)B InGaAs surfaces with in content of 0.53 and 0.70 and their Al2O3/InGaAs MOS interface properties, Masafumi Yokoyama,Noriyuki Taoka,Rena Suzuki,Osamu Ichikawa,Hisashi Yamada,Noboru Fukuhara,Masahiko Hata,Masakazu Sugiyama,Yoshiaki Nakano,Mitsuru Takenaka,Shinichi Takagi, 2012 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM), ,  167- 170, 2013年, ,  

Limiting factors of channel mobility in III-V/Ge MOSFETs, S. Takagi,S. H. Kim,R. Zhang,N. Taoka,M. Yokoyama,M. Takenaka, ECS Transactions, 53( 3), 107- 122, 2013年, https://doi.org/10.1149/05303.0107ecst,  

Characterization of local strain structures in heteroepitaxial Ge <inf>1-x</inf>Sn<inf>x</inf>/Ge microstructures by using microdiffraction method, S. Ike,Y. Moriyama,M. Kurosawa,N. Taoka,O. Nakatsuka,Y. Imai,S. Kimura,T. Tezuka,S. Zaima, ECS Transactions, 58( 9), 185- 192, 2013年, https://doi.org/10.1149/05809.0185ecst,  

Reduction in interface state density of Al2O3/InGaAs metal-oxide-semiconductor interfaces by InGaAs surface nitridation, Takuya Hoshii,Sunghoon Lee,Rena Suzuki,Noriyuki Taoka,Masafumi Yokoyama,Hishashi Yamada,Masahiko Hata,Tetsuji Yasuda,Mitsuru Takenaka,Shinichi Takagi, JOURNAL OF APPLIED PHYSICS, 112( 7),  , 2012年10月, https://doi.org/10.1063/1.4755804,  

Impact of atomic layer deposition temperature on HfO2/InGaAs metal-oxide-semiconductor interface properties, Rena Suzuki,Noriyuki Taoka,Masafumi Yokoyama,Sang-Hyeon Kim,Takuya Hoshii,Tatsuro Maeda,Tetsuji Yasuda,Osamu Ichikawa,Noboru Fukuhara,Masahiko Hata,Mitsuru Takenaka,Shinichi Takagi, JOURNAL OF APPLIED PHYSICS, 112( 8),  , 2012年10月, https://doi.org/10.1063/1.4759329,  

III-V/Ge High Mobility Channel Integration of InGaAs n-Channel and Ge p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Self-Aligned Ni-Based Metal Source/Drain Using Direct Wafer Bonding, Masafumi Yokoyama,Sanghyeon Kim,Rui Zhang,Noriyuki Taoka,Yuji Urabe,Tatsuro Maeda,Hideki Takagi,Tetsuji Yasuda,Hisashi Yamada,Osamu Ichikawa,Noboru Fukuhara,Masahiko Hata,Masakazu Sugiyama,Yoshiaki Nakano,Mitsuru Takenaka,Shinichi Takagi, APPLIED PHYSICS EXPRESS, 5( 7),  , 2012年07月, https://doi.org/10.1143/APEX.5.076501,  

Strained In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with epitaxial based biaxial strain, SangHyeon Kim,Masafumi Yokoyama,Noriyuki Taoka,Ryosho Nakane,Tetsuji Yasuda,Osamu Ichikawa,Noboru Fukuhara,Masahiko Hata,Mitsuru Takenaka,Shinichi Takagi, APPLIED PHYSICS LETTERS, 100( 19),  , 2012年05月, https://doi.org/10.1063/1.4714770,  

1-nm-capacitance-equivalent-thickness HfO2/Al2O3/InGaAs metal-oxide-semiconductor structure with low interface trap density and low gate leakage current density, R. Suzuki,N. Taoka,M. Yokoyama,S. Lee,S. H. Kim,T. Hoshii,T. Yasuda,W. Jevasuwan,T. Maeda,O. Ichikawa,N. Fukuhara,M. Hata,M. Takenaka,S. Takagi, APPLIED PHYSICS LETTERS, 100( 13), 3- , 2012年03月, https://doi.org/10.1063/1.3698095,  

Initial Processes of Atomic Layer Deposition of Al2O3 on InGaAs: Interface Formation Mechanisms and Impact on Metal-Insulator-Semiconductor Device Performance, Wipakorn Jevasuwan,Yuji Urabe,Tatsuro Maeda,Noriyuki Miyata,Tetsuji Yasuda,Hisashi Yamada,Masahiko Hata,Noriyuki Taoka,Mitsuru Takenaka,Shinichi Takagi, MATERIALS, 5( 3), 404- 414, 2012年03月, https://doi.org/10.3390/ma5030404,  

In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with self-aligned metal source/drain using Co-InGaAs alloys, SangHyeon Kim,Masafumi Yokoyama,Noriyuki Taoka,Ryosho Nakane,Tetsuji Yasuda,Osamu Ichikawa,Noboru Fukuhara,Masahiko Hata,Mitsuru Takenaka,Shinichi Takagi, APPLIED PHYSICS LETTERS, 100( 7),  , 2012年02月, https://doi.org/10.1063/1.3685505,  

High-Mobility Ge pMOSFET With 1-nm EOT Al2O3/GeOx/Ge Gate Stack Fabricated by Plasma Post Oxidation, Rui Zhang,Takashi Iwasaki,Noriyuki Taoka,Mitsuru Takenaka,Shinichi Takagi, IEEE TRANSACTIONS ON ELECTRON DEVICES, 59( 2), 335- 341, 2012年02月, https://doi.org/10.1109/TED.2011.2176495,  

Electron Mobility Enhancement of Extremely Thin Body In0.7Ga0.3As-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors on Si Substrates by Metal-Oxide-Semiconductor Interface Buffer Layers, SangHyeon Kim,Masafumi Yokoyama,Noriyuki Taoka,Ryo Iida,Sunghoon Lee,Ryosho Nakane,Yuji Urabe,Noriyuki Miyata,Tetsuji Yasuda,Hisashi Yamada,Noboru Fukuhara,Masahiko Hata,Mitsuru Takenaka,Shinichi Takagi, APPLIED PHYSICS EXPRESS, 5( 1),  , 2012年01月, https://doi.org/10.1143/APEX.5.014201,  

MOS interface control of high mobility channel materials for realizing ultrathin EOT gate stacks, S. Takagi,R. Zhang,R. Suzuki,N. Taoka,M. Yokoyama,M. Takenaka, ECS Transactions, 50( 4), 107- 122, 2012年, https://doi.org/10.1149/05004.0107ecst,  

Growth and Optical Properties of Ge1-xSnx Alloy Thin Films with a High Sn Content, Shigeaki Zaima,Osamu Nakatsuka,Marika Nakamura,Wakana Takeuchi,Yosuke Shimura,Noriyuki Taoka, SIGE, GE, AND RELATED COMPOUNDS 5: MATERIALS, PROCESSING, AND DEVICES, 50( 9), 897- 902, 2012年, https://doi.org/10.1149/05009.0897ecst,  

High mobility Ge pMOSFETs with 0.7 nm ultrathin EOT using HfO 2/Al 2O 3/GeO x/Ge gate stacks fabricated by plasma post oxidation, R. Zhang,P. C. Huang,N. Taoka,M. Takenaka,S. Takagi, Digest of Technical Papers - Symposium on VLSI Technology, ,  161- 162, 2012年, https://doi.org/10.1109/VLSIT.2012.6242511,  

MOS interface and channel engineering for high-mobility Ge/III-V CMOS, S. Takagi,R. Zhang,S. H. Kim,N. Taoka,M. Yokoyama,J. K. Suh,R. Suzuki,M. Takenaka, Technical Digest - International Electron Devices Meeting, IEDM, ,  23.1.4- , 2012年, https://doi.org/10.1109/IEDM.2012.6479085,  

Sub-60 nm deeply-scaled channel length extremely-thin body In xGa 1-xAs-on-insulator MOSFETs on Si with Ni-InGaAs metal S/D and MOS interface buffer engineering, S. H. Kim,M. Yokoyama,N. Taoka,R. Nakane,T. Yasuda,O. Ichikawa,N. Fukuhara,M. Hata,M. Takenaka,S. Takagi, Digest of Technical Papers - Symposium on VLSI Technology, ,  177- 178, 2012年, https://doi.org/10.1109/VLSIT.2012.6242519,  

Planar-type In0.53Ga0.47As channel band-to-band tunneling metal-oxide-semiconductor field-effect transistors, Ryo Iida,Sang-Hyeon Kim,Masafumi Yokoyama,Noriyuki Taoka,Sang-Hoon Lee,Mitsuru Takenaka,Shinichi Takagi, JOURNAL OF APPLIED PHYSICS, 110( 12),  , 2011年12月, https://doi.org/10.1063/1.3668120,  

High Performance Extremely Thin Body InGaAs-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors on Si Substrates with Ni-InGaAs Metal Source/Drain, SangHyeon Kim,Masafumi Yokoyama,Noriyuki Taoka,Ryo Iida,Sunghoon Lee,Ryosho Nakane,Yuji Urabe,Noriyuki Miyata,Tetsuji Yasuda,Hisashi Yamada,Noboru Fukuhara,Masahiko Hata,Mitsuru Takenaka,Shinichi Takagi, APPLIED PHYSICS EXPRESS, 4( 11),  , 2011年11月, https://doi.org/10.1143/APEX.4.114201,  

Highly strained-SiGe-on-insulator p-channel metal-oxide-semiconductor field-effective transistors fabricated by applying Ge condensation technique to strained-Si-on-insulator substrates, Junkyo Suh,Ryosho Nakane,Noriyuki Taoka,Mitsuru Takenaka,Shinichi Takagi, APPLIED PHYSICS LETTERS, 99( 14),  , 2011年10月, https://doi.org/10.1063/1.3647631,  

Accurate evaluation of Ge metal-insulator-semiconductor interface properties, Noriyuki Taoka,Keiji Ikeda,Wataru Mizubayashi,Yukinori Morita,Shinji Migita,Hiroyuki Ota,Shinichi Takagi, JOURNAL OF APPLIED PHYSICS, 110( 6),  , 2011年09月, https://doi.org/10.1063/1.3633517,  

Sub-10-nm Extremely Thin Body InGaAs-on-Insulator MOSFETs on Si Wafers With Ultrathin Al2O3 Buried Oxide Layers, Masafumi Yokoyama,Ryo Iida,Sanghyeon Kim,Noriyuki Taoka,Yuji Urabe,Hideki Takagi,Tetsuji Yasuda,Hisashi Yamada,Noboru Fukuhara,Masahiko Hata,Masakazu Sugiyama,Yoshiaki Nakano,Mitsuru Takenaka,Shinichi Takagi, IEEE ELECTRON DEVICE LETTERS, 32( 9), 1218- 1220, 2011年09月, https://doi.org/10.1109/LED.2011.2158568,  

Impact of GeOx interfacial layer thickness on Al 2O3/Ge MOS interface properties, R. Zhang,T. Iwasaki,N. Taoka,M. Takenaka,S. Takagi, Microelectronic Engineering, 88( 7), 1533- 1536, 2011年07月, https://doi.org/10.1016/j.mee.2011.03.130,  

AC response analysis of C-V curves and quantitative analysis of conductance curves in Al2O3/InP interfaces, Noriyuki Taoka,Masafumi Yokoyama,Sang Hyeon Kim,Rena Suzuki,Takuya Hoshii,Ryo Iida,Sunghoon Lee,Yuji Urabe,Noriyuki Miyata,Tetsuji Yasuda,Hisashi Yamada,Noboru Fukuhara,Masahiko Hata,Mitsuru Takenaka,Shinichi Takagi, MICROELECTRONIC ENGINEERING, 88( 7), 1087- 1090, 2011年07月, https://doi.org/10.1016/j.mee.2011.03.036,  

Self-aligned metal source/drain InP n-metal-oxide-semiconductor field-effect transistors using Ni-InP metallic alloy, SangHyeon Kim,Masafumi Yokoyama,Noriyuki Taoka,Ryo Iida,Sunghoon Lee,Ryosho Nakane,Yuji Urabe,Noriyuki Miyata,Tetsuji Yasuda,Hisashi Yamada,Noboru Fukuhara,Masahiko Hata,Mitsuru Takenaka,Shinichi Takagi, APPLIED PHYSICS LETTERS, 98( 24),  , 2011年06月, https://doi.org/10.1063/1.3597228,  

Nature of interface traps in Ge metal-insulator-semiconductor structures with GeO2 interfacial layers, Noriyuki Taoka,Wataru Mizubayashi,Yukinori Morita,Shinji Migita,Hiroyuki Ota,Shinichi Takagi, JOURNAL OF APPLIED PHYSICS, 109( 8),  , 2011年04月, https://doi.org/10.1063/1.3575332,  

Al2 O3 / GeOx /Ge gate stacks with low interface trap density fabricated by electron cyclotron resonance plasma postoxidation, R. Zhang,T. Iwasaki,N. Taoka,M. Takenaka,S. Takagi, Applied Physics Letters, 98( 11),  , 2011年03月14日, https://doi.org/10.1063/1.3564902,  

Self-Aligned Metal Source/Drain InxGa1-x As n-Metal-Oxide-Semiconductor Field-Effect Transistors Using Ni-InGaAs Alloy, SangHyeon Kim,Masafumi Yokoyama,Noriyuki Taoka,Ryo Iida,Sunghoon Lee,Ryosho Nakane,Yuji Urabe,Noriyuki Miyata,Tetsuji Yasuda,Hisashi Yamada,Noboru Fukuhara,Masahiko Hata,Mitsuru Takenaka,Shinichi Takagi, APPLIED PHYSICS EXPRESS, 4( 2),  , 2011年02月, https://doi.org/10.1143/APEX.4.024201,  

MOS Interface Control Technologies for III-V/Ge Channel MOSFETs, S. Takagi,R. Zhang,T. Hoshii,N. Taoka,M. Takenaka, PHYSICS AND TECHNOLOGY OF HIGH-K MATERIALS 9, 41( 3), 3- 20, 2011年, https://doi.org/10.1149/1.3633015,  

Enhancement Technologies and Physical Understanding of Electron Mobility in III-V n-MOSFETs with Strain and MOS Interface Buffer Engineering, S. H. Kim,M. Yokoyama,N. Taoka,R. Nakane,T. Yasuda,O. Ichikawa,N. Fukuhara,M. Hata,M. Takenaka,S. Takagi, 2011 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), ,   , 2011年, ,  

Impact of Fermi Level Pinning inside Conduction Band on Electron Mobility of InxGa1-xAs MOSFETs and Mobility Enhancement by Pinning Modulation, N. Taoka,M. Yokoyama,S. H. Kim,R. Suzuki,R. Iida,S. Lee,T. Hoshii,W. Jevasuwan,T. Maeda,T. Yasuda,O. Ichikawa,N. Fukuhara,M. Hata,M. Takenaka,S. Takagi, 2011 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), ,   , 2011年, https://doi.org/10.1109/IEDM.2011.6131622,  

1-nm-thick EOT High Mobility Ge n- and p-MOSFETs with Ultrathin GeOx/Ge MOS Interfaces Fabricated by Plasma Post Oxidation, Rui Zhang,Noriyuki Taoka,Po-Chin Huang,Mitsuru Takenaka,Shinichi Takagi, 2011 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), ,   , 2011年, ,  

Suppression of ALD-Induced Degradation of Ge MOS Interface Properties by Low Power Plasma Nitridation of GeO2, Rui Zhang,Takashi Iwasaki,Noriyuki Taoka,Mitsuru Takenaka,Shinichi Takagi, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 158( 8), G178- G184, 2011年, https://doi.org/10.1149/1.3599065,  

Fabrication of Ge-rich SiGe-On-Insulator Waveguide for Optical Modulator, Younghyun Kim,Masafumi Yokoyama,Noriyuki Taoka,Mitsuru Takenaka,Shinichi Takagi, 2011 IEEE PHOTONICS CONFERENCE (PHO), ,  465- 466, 2011年, ,  

Highly-strained SGOI p-channel MOSFETs fabricated by applying Ge condensation technique to strained-SOI substrates, Junkyo Suh,Ryosho Nakane,Noriyuki Taoka,Mitsuru Takenaka,Shinichi Takagi, Device Research Conference - Conference Digest, DRC, ,  235- 236, 2011年, https://doi.org/10.1109/DRC.2011.5994512,  

Physical origins of mobility enhancement of Ge p-channel metal-insulator-semiconductor field effect transistors with Si passivation layers, Noriyuki Taoka,Wataru Mizubayashi,Yukinori Morita,Shinji Migita,Hiroyuki Ota,Shinichi Takagi, JOURNAL OF APPLIED PHYSICS, 108( 10),  , 2010年11月, https://doi.org/10.1063/1.3512868,  

Self-aligned metal Source/Drain InxGa1-xas n-MOSFETs using Ni-InGaAs alloy, S. H. Kim,M. Yokoyama,N. Taoka,R. Iida,S. Lee,R. Nakane,Y. Urabe,N. Miyata,T. Yasuda,H. Yamada,N. Fukuhara,M. Hata,M. Takenaka,S. Takagi, Technical Digest - International Electron Devices Meeting, IEDM, ,  26.6.4- , 2010年, https://doi.org/10.1109/IEDM.2010.5703429,  

Correlation between Channel Mobility Improvements and Negative V-th Shifts in III-V MISFETs: Dipole Fluctuation as New Scattering Mechanism, Yuji Urabe,Noriyuki Miyata,Hiroyuki Ishii,Taro Itatani,Tatsuro Maeda,Tetsuji Yasuda,Hisashi Yamada,Noboru Fukuhara,Masahiko Hata,Masafumi Yokoyama,Noriyuki Taoka,Mitsuru Takenaka,Shinichi Takagi, 2010 INTERNATIONAL ELECTRON DEVICES MEETING - TECHNICAL DIGEST, ,   , 2010年, ,  

Effect of Ge Metal-Insulator-Semiconductor Interfacial Layers on Interface Trap Density near the Conduction Band Edge, Noriyuki Taoka,Wataru Mizubayashi,Yukinori Morita,Shinji Migita,Hiroyuki Ota,Shinichi Takagi, JAPANESE JOURNAL OF APPLIED PHYSICS, 49( 4),  , 2010年, https://doi.org/10.1143/JJAP.49.04DA09,  

Self-aligned metal Source/Drain InxGa1-xAs n-MOSFETs using Ni-InGaAs alloy, S. H. Kim,M. Yokoyama,N. Taoka,R. Iida,S. Lee,R. Nakane,Y. Urabe,N. Miyata,T. Yasuda,H. Yamada,N. Fukuhara,M. Hata,M. Takenaka,S. Takagi, 2010 INTERNATIONAL ELECTRON DEVICES MEETING - TECHNICAL DIGEST, ,   , 2010年, ,  

Importance of minority carrier response in accurate characterization of Ge metal-insulator-semiconductor interface traps, Noriyuki Taoka,Toyoji Yamamoto,Masatomi Harada,Yoshimi Yamashita,Naoharu Sugiyama,Shinichi Takagi, JOURNAL OF APPLIED PHYSICS, 106( 4),  , 2009年08月, https://doi.org/10.1063/1.3204025,  

Ion-Implanted Impurity Profiles in Ge Substrates and Amorphous Layer Thickness Formed by Ion Implantation, Kunihiro Suzuki,Keiji Ikeda,Yoshimi Yamashita,Masaomi Harada,Noriyuki Taoka,Osamu Kiso,Toyoji Yamamoto,Naoharu Sugiyama,Shin-Ichi Takagi, IEEE TRANSACTIONS ON ELECTRON DEVICES, 56( 4), 627- 633, 2009年04月, https://doi.org/10.1109/TED.2009.2014193,  

Physical Origins of Mobility Enhancement of Ge pMISFETs with Si Passivation Layers, N. Taoka,W. Mizubayashi,Y. Morita,S. Migita,H. Ota,S. Takagi, 2009 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, ,  80- 81, 2009年, ,  

Growth mechanism of epitaxial NiSi2 in atomic-scale for schottky source/drain in silicon nanowire transistors, S. Migita,Y. Morita,N. Taoka,W. Mizubayashi,H. Ota, Extended Abstracts of the 9th International Workshop on Junction Technology, IWJT 2009, ,  38- 39, 2009年, https://doi.org/10.1109/IWJT.2009.5166214,  

Interfacial control and electrical properties of Ge MOS structures, S. Takagi,N. Taoka,M. Takenaka, ECS Transactions, 19( 2), 67- 85, 2009年, https://doi.org/10.1149/1.3122086,  

Impact of Minorty Carrier Response on Characterization of Ge MIS Interface Traps, N. Taoka,W. Mizubayashi,Y. Morita,S. Migita,H. Ota,S. Takagi, SILICON NITRIDE, SILICON DIOXIDE, AND EMERGING DIELECTRICS 10, 19( 2), 117- 128, 2009年, https://doi.org/10.1149/1.3122089,  

Effects of Si passivation on Ge metal-insulator-semiconductor interface properties and inversion-layer hole mobility, Noriyuki Taoka,Masatomi Harada,Yoshimi Yamashita,Toyoji Yamamoto,Naoharu Sugiyama,Shin-Ichi Takagi, APPLIED PHYSICS LETTERS, 92( 11),  , 2008年03月, https://doi.org/10.1063/1.2899631,  

Effects of gate current stress on electrical characteristics, Masatomi Harada,Noriyuki Taoka,Toyoji Yamamoto,Yoshimi Yamashita,Osamu Kiso,Naoharu Sugiyama,Shin-ichi Takagi, ULIS 2008: PROCEEDINGS OF THE 9TH INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON, ,  15- 18, 2008年, ,  

Effects of ambient conditions in thermal treatment for Ge(001) surfaces on Ge-MIS interface properties, Noriyuki Taoka,Keiji Ikeda,Yoshimi Yamashita,Naoharu Sugiyama,Shin-ichi Takagi, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 22( 1), S114- S117, 2007年01月, https://doi.org/10.1088/0268-1242/22/1/S27,  

Gate dielectric formation and MIS interface characterization on Ge, Takagi, S.,Maeda, T.,Taoka, N.,Nishizawa, M.,Morita, Y.,Ikeda, K.,Yamashita, Y.,Nishikawa, M.,Kumagai, H.,Nakane, R.,Sugahara, S.,Sugiyama, N., Microelectronic Engineering, 84( 9-10), 2314- 2319, 2007年, https://doi.org/10.1016/j.mee.2007.04.129,  

High performance 60 nm gate length germanium p-MOSFETs with Ni germanide metal source/drain, Toyoji Yamamoto,Yoshimi Yamashita,Masatomi Harada,Noriyuki Taoka,Keiji Ikeda,Kunihiro Suzuki,Osamu Kiso,Naoharu Sugiyama,Shin-ichi Takagi, 2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2, ,  1041- +, 2007年, ,  

Control of misfit dislocations in strain-relaxed SiGe buffer layers on SOI substrates, Noriyuki Taoka,Akira Sakai,Shogo Mochizuki,Osamu Nakatsuka,Masaki Ogawa,Shigeaki Zaima, THIN SOLID FILMS, 508( 1-2), 147- 151, 2006年06月, https://doi.org/10.1016/j.tsf.2005.09.196,  

Local strain in SiGe/Si heterostructures analyzed by X-ray microdiffraction, Shogo Mochizuki,Akira Sakai,Noriyuki Taoka,Osamu Nakatsuka,Shingo Takeda,Shigeru Kimura,Masaki Ogawa,Shigeaki Zaima, THIN SOLID FILMS, 508( 1-2), 128- 131, 2006年06月, https://doi.org/10.1016/j.tsf.2005.08.417,  

Analysis of microstructures in SiGe buffer layers on silicon-on-insulator substrates, Noriyuki Taoka,Akira Sakai,Shogo Mochizuki,Osamu Nakatsuka,Masaki Ogawa,Shigeaki Zaima,Tsutomu Tezuka,Naoharu Sugiyama,Shin Ichi Takagi, Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 44( 10), 7356- 7363, 2005年10月11日, https://doi.org/10.1143/JJAP.44.7356,  

Growth and characterization of strain-relaxed SiGe buffer layers on Si(0 0 1) substrates with pure-edge misfit dislocations, Noriyuki Taoka,Akira Sakai,Tomohiro Egawa,Osamu Nakatsuka,Shigeaki Zaima,Yukio Yasuda, Materials Science in Semiconductor Processing, 8( 1-3 SPEC. ISS.), 131- 135, 2005年02月, https://doi.org/10.1016/j.mssp.2004.09.057,  

Dislocation and strain engineering for SiGe buffer layers on Si, Akira Sakai,Shogo Mochizuki,Noriyuki Taoka,Osamu Nakatsuka,Shingo Takeda,Shigeru Kimura,Masaki Ogawa,Shigeaki Zaima, Proceedings - Electrochemical Society, PV 2005-10,  16- 29, 2005年, ,  

Strain-relaxation mechanisms of SiGe layers formed by two-step growth on Si(0 0 1) substrates, T. Egawa,A. Sakai,T. Yamamoto,N. Taoka,O. Nakatsuka,S. Zaima,Y. Yasuda, Applied Surface Science, 224( 1-4), 104- 107, 2004年03月15日, https://doi.org/10.1016/j.apsusc.2003.08.072,  

Defects induced by reactive ion etching in Ge substrate, Kusumandari,Noriyuki Taoka,Wakana Takeuchi,Mitsuo Sakashita,Osamu Nakatsuka,Shigeaki Zaima, Advanced Materials Research, 896,  241- 244, 2014年,  

Effect of gate metal electrode on chemical bonding state in metal/Pr-oxide/Ge gate stack structure, Kimihiko Kato,Mitsuo Sakashita,Wakana Takeuchi,Noriyuki Taoka,Osamu Nakatsuka,Shigeaki Zaima, 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings, ,  68- 69, 2012年,  

Material properties and applications of Ge <inf>1-x</inf>Sn <inf>x</inf> alloys for Ge nanoelectronics, Osamu Nakatsuka,Yosuke Shimura,Wakana Takeuchi,Noriyuki Taoka,Shigeaki Zaima, 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings, ,  116- 117, 2012年,  

CMOS integration of InGaAs nMOSFETs and Ge pMOSFETs with self-align Ni-based metal S/D using direct wafer bonding, M. Yokoyama,S. H. Kim,R. Zhang,N. Taoka,Y. Urabe,T. Maeda,H. Takagi,T. Yasuda,H. Yamada,O. Ichikawa,N. Fukuhara,M. Hata,M. Sugiyama,Y. Nakano,M. Takenaka,S. Takagi, Digest of Technical Papers - Symposium on VLSI Technology, ,  60- 61, 2011年,  

Extremely-thin-body InGaAs-On-Insulator MOSFETs on Si fabricated by direct wafer bonding, M. Yokoyama,R. Iida,S. H. Kim,N. Taoka,Y. Urabe,T. Yasuda,H. Takagi,H. Yamada,N. Fukuhara,M. Hata,M. Sugiyama,Y. Nakano,M. Takenaka,S. Takagi, Technical Digest - International Electron Devices Meeting, IEDM, ,   , 2010年,  

Control and characterization of strain in SiGe/Si heterostructures with engineered misfit dislocations, A. Sakai,N. Taoka,S. Mochizuki,K. Yukawa,O. Nakatsuka,S. Takeda,S. Kimura,M. Ogawa,S. Zaima, Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest, 2006,   , 2006年,  

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